2N5551-C-AB3-R [UTC]
HIGH VOLTAGE SWITCHING TRANSISTOR; 高电压开关晶体管型号: | 2N5551-C-AB3-R |
厂家: | Unisonic Technologies |
描述: | HIGH VOLTAGE SWITCHING TRANSISTOR |
文件: | 总4页 (文件大小:53K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2N5551
NPN SILICON TRANSISTOR
HIGH VOLTAGE SWITCHING
TRANSISTOR
1
ꢀ
FEATURES
SOT-89
* High collector-emitter voltage:
CEO=160V
* High current gain
V
ꢀ
APPLICATIONS
1
TO-92
*
Telephone switching circuit
* Amplifier
*Pb-free plating product number: 2N5551L
ꢀ
ORDERING INFORMATION
Order Number
Pin Assignment
Packing
Package
Normal
Lead Free Plating
2N5551L-x-AB3-R
2N5551L-x-T92-B
2N5551L-x-T92-K
1
B
E
E
2
C
B
B
3
E
C
C
2N5551-x-AB3-R
2N5551-x-T92-B
2N5551-x-T92-K
SOT-89
TO-92
TO-92
Tape Reel
Tape Box
Bulk
2N5551L-x-AB3-R
(1)Packing Type
(1) B: Tape Box, K: Bulk, R: Tape Reel
(2) T92: TO-92, AB3: SOT-89
(2)Package Type
(3)Rank
(3) x: refer to Classification of hFE
(4) L: Lead Free Plating, Blank: Pb/Sn
(4)Lead Plating
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Copyright © 2005 Unisonic Technologies Co., Ltd
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2N5551
NPN SILICON TRANSISTOR
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ABSOLUTE MAXIMUM RATINGS (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
VCBO
RATINGS
180
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Dissipation
Collector Dissipation
Collector Current
VCEO
160
V
VEBO
6
V
TO-92
625
mW
mW
mA
℃
PC
SOT-89
500
IC
TJ
600
Junction Temperature
Storage Temperature
+150
-55 ~ +150
TSTG
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ꢀ
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage BVCEO IC=1mA, IB=0
SYMBOL
TEST CONDITIONS
MIN
180
160
6
TYP
MAX
UNIT
V
BVCBO IC=100µA, IE=0
V
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
BVEBO IE=10µA, IC=0
V
ICBO
IEBO
hFE1
hFE2
hFE3
VCB=120V, IE=0
VBE=4V,IC=0
50
50
nA
nA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE=5V, IC=50mA
80
80
80
DC Current Gain(Note)
160
400
IC=10mA, IB=1mA
IC=50mA, IB=5mA
0.15
0.2
1
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCE(SAT)
V
V
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VBE(SAT)
1
Current Gain Bandwidth Product
Output Capacitance
fT
VCE=10V, IC=10mA, f=100MHz
VCB=10V, IE=0 f=1MHz
IC=0.25mA, VCE=5V
RS=1kΩ, f=10Hz ~ 15.7kHz
100
300
6.0
MHz
pF
Cob
Noise Figure
NF
8
dB
Note: Pulse test: PW<300µs, Duty cycle<2%
ꢀ
CLASSIFICATION OF hFE
RANK
A
B
C
RANGE
80-170
150-240
200-400
UNISONIC TECHNOLOGIES CO., LTD
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QW-R201-002.B
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2N5551
NPN SILICON TRANSISTOR
ꢀ
TYPICAL CHARACTERISTICS
CollectorOutput Capacitance
DC Current Gain
VCE=5V
10
8
103
102
f=1MHz
IE=0
6
4
2
101
100
0
101
102
10-1
100
101
102
103
100
Collector-Base Voltage (V)
CollectorCurrent, IC (mA)
Saturation Voltage
Base-Emitter on Voltage
103
102
101
100
IC=10*IB
VCE=5V
VBE(SAT)
10-1
10-2
101
100
VCE(SAT)
0
0.2
0.4
0.6
0.8 1.0
10-1
100
101
102
103
Collector Current, IC (mA)
Base-Emitter Voltage (V)
Current Gain-Bandwidth Product
103
102
VCE=10V
101
100
100
101
102
103
Collector Current, IC (mA)
UNISONIC TECHNOLOGIES CO., LTD
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QW-R201-002.B
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2N5551
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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