2N40_1109 [UTC]
2A, 400V N-CHANNEL POWER MOSFET; 2A ， 400V N沟道功率MOSFET
| 型号： | 2N40_1109 |
| 厂家： | 
Unisonic Technologies |
| 描述： | 2A, 400V N-CHANNEL POWER MOSFET |
| 文件： | 总5页 (文件大小：170K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2N40
Preliminary
Power MOSFET
2A, 400V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 2N40 is an N-channel mode power MOSFET using
UTC’ s advanced technology to provide customers with a minimum
on-state resistance, stable off–state characteristics and superior
switching performance. It also can withstand high energy pulse in
the avalanche.
The UTC 2N40 is usually used in general purpose switching
applications, motor control circuits and switched mode power supply.
FEATURES
* High switching speed
* RDS(ON)=3.4Ω @ VGS=10V
* 100% avalanche tested
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Pin Assignment
Package
TO-220
Packing
Tube
Halogen Free
2N40G-TA3-T
1
2
3
2N40L-TA3-T
G
D
S
Note: Pin Assignment: G: Gate D: Drain
S: Source
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Copyright © 2011 Unisonic Technologies Co., Ltd
QW-R502-524.b
2N40
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
ID
400
±30
2
V
Continuous
Pulsed
A
Drain Current
IDM
7
A
Avalanche Current
IAR
2.5
A
Single Pulsed Avalanche Energy
Power Dissipation
EAS
100
25
mJ
W
PD
Linear Derating Factor
Junction Temperature
Storage Temperature
△PD/△Tmb
TJ
0.2
W/°C
°C
°C
150
-55 ~ 150
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
θJA
RATINGS
UNIT
°C/W
°C/W
Junction to Ambient
Junction to Case
62.5
5
θJC
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
BVDSS
ID=250µA, VGS=0V
400
V
△BVDSS/△TJ VDS=VGS, ID=250µA
0.45
1
V/°C
µA
Drain-Source Leakage Current
IDSS
IGSS
VDS=400V, VGS=0V
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
25
Forward
Reverse
+10 +200 nA
-10 -200 nA
Gate- Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=1.25A
2.0
4.0
V
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
3.0 3.4
ꢀ
CISS
COSS
CRSS
240
44
pF
pF
pF
VGS=0V, VDS=25V, f=1.0MHz
VGS=10V, VDS=320V, ID=2.5A
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
26
QG(TOT)
QGS
QGD
tD(ON)
tR
20
2
25
3
nC
nC
nC
ns
ns
ns
ns
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
8
12
10
25
46
25
VDD=200V, ID=2.5A, RG=24ꢀ,
RD=78 ꢀ
Turn-OFF Delay Time
Fall-Time
tD(OFF)
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
IS
ISM
VSD
trr
2.5
10
A
A
TC=25°C
IS=2.5A, VGS=0V
1.2
V
200
2.0
ns
µC
IS=2.5A, VGS=0V, dI/dt=100A/µs
QRR
UNISONIC TECHNOLOGIES CO., LTD
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2N40
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Gate Charge Test Circuit
Gate Charge Waveforms
VGS
Same Type
as DUT
QG
12V
10V
200nF
VDS
QGS
QGD
50kꢀ
300nF
VGS
DUT
3mA
Charge
Unclamped Inductive Switching Waveforms
Unclamped Inductive Switching Test Circuit
VDS
1
2
BVDSS
BVDSS-VDD
2
EAS
=
LIAS
BVDSS
IAS
RG
ID
L
10V
ID(t)
DUT
tP
VDD
VDD
VDS(t)
Time
tP
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2N40
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
RG
L
-
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
Gate Pulse Width
D=
VGS
Gate Pulse Period
10V
(Driver)
I
FM, Body Diode Forward Current
ISD
di/dt
(DUT)
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
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2N40
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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