25N20G-TF3-T [UTC]
N-CHANNEL ENHANCEMENT MODE POWER MOSFET;
| 型号： | 25N20G-TF3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总5页 (文件大小：225K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
25N20
Power MOSFET
25A, 200V N-CHANNEL
ENHANCEMENT MODE POWER
MOSFET
DESCRIPTION
The UTC 25N20 is an N-channel enhancement mode power
MOSFET and it uses UTC’s perfect technology to provide designers
with fast switching, ruggedized device design, low on-resistance and
cost-effectiveness.
It is generally suitable for all commercial-industrial applications
and DC/DC converters requiring low voltage.
FEATURES
* RDS(ON) < 160 mΩ @ VGS =10V, ID =16A
* Single Drive Requirement
* Low Gate Charge
* RoHS Compliant
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
D
D
3
S
S
TO-220F
G
G
Tube
Tube
25N20L-TF3-T
25N20L-TF1-T
25N20G-TF3-T
25N20G-TF1-T
TO-220F1
Note: Pin Assignment: G: Gate D: Drain
S: Source
MARKING
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Copyright © 2015 Unisonic Technologies Co., Ltd
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25N20
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
200
UNIT
Drain Source Voltage
Gate Source Voltage
Continuous Drain Current
(VGS=10V)
V
V
A
A
A
±20
TC =25°C
25
TC = 100°C
ID
15.86
80
Pulsed Drain Current (Note 2)
Total Power Dissipation
(TC =25°C)
IDM
PD
50
W
Operating Junction Temperature
Storage Temperature
TJ
-55 ~ +150
-55 ~ +150
°C
°C
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by max. junction temperature.
THERMAL DATA
PARAMETER
SYMBOL
θJA
RATINGS
62.5
UNIT
°C/W
°C/W
Junction to Ambient
Junction to Case
θJC
2.5
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
BVDSS
VGS =0V, ID =250µA
200
V
∆BVDSS/∆TJ Reference to 25°C , ID =1mA
0.14
V/°C
VDS =100V, VGS =0V, TJ=25°C
IDSS
1
µA
µA
Drain-Source Leakage Current
VDS =80V, VGS =0V,TJ =150°C
100
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note)
Forward Transconductance
DYNAMIC PARAMETERS
Input Capacitance
IGSS
VGS =±20V
±100 nA
VGS(TH)
RDS(ON)
gFS
VDS =VGS, ID =250µA
VGS =10V, ID =16A
VDS =10V, ID =16A
2
4
V
112 160 mΩ
14
S
CISS
COSS
CRSS
1000 1700 pF
VDS =25V, VGS=0V, f=1.0MHz
Output Capacitance
240
25
pF
pF
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Turn-ON Delay Time1
tD(ON)
tR
tD(OFF)
tF
56
75
ns
ns
Turn-ON Rise Time
VDD=30V, ID=0.5A, RG=25mΩ,
VGS=10V, RD=3.125Ω
Turn-OFF Delay Time
240
100
35
ns
Turn-OFF Fall-Time
ns
Total Gate Charge (Note)
Gate Source Charge
QG
40
nC
nC
nC
VGS=10V, VDS=50V, ID=1.3A
QGS
QGD
8
Gate Drain Charge
9.7
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage (Note)
Reverse Recovery Time
VSD
tRR
IS =25A, VGS =0V
IS =25A,VGS =0V,
dI/dt=100A/µs
1.3
V
90
ns
nC
Reverse Recovery Charge
QRR
380
Note: Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%.
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25N20
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
VGS
(Driver)
Period
D=
P.W.
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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25N20
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
RL
VDS
VDS
90%
VDD
VGS
RG
10%
VGS
D.U.T.
10V
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
Time
tp
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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25N20
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
300
300
250
200
150
100
250
200
150
100
50
50
0
0
0
40
80
120 160 200 240
0
1
2
3
4
5
Gate Threshold Voltage, VTH (V)
Drain-Source Breakdown Voltage, BVDSS (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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