1N90L-TF3-T [UTC]
1 Amps, 900 Volts N-CHANNEL POWER MOSFET; 1安培， 900伏特N沟道功率MOSFET
| 型号： | 1N90L-TF3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | 1 Amps, 900 Volts N-CHANNEL POWER MOSFET |
| 文件： | 总6页 (文件大小：160K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
1N90
Preliminary
Power MOSFET
1 Amps, 900 Volts
N-CHANNEL POWER MOSFET
1
TO-220
DESCRIPTION
The UTC 1N90 is an N-channel mode power MOSFET, using
1
1
UTC’s advanced technology to provide costomers planar stripe and
DMOS technology. This technology specializes in allowing a minimum
on-state resistance, superior switching performance. It also can
withstand high energy pulse in the avalanche and commutation mode.
The UTC 1N90 is universally applied in high efficiency switch mode
power supply.
TO-220F
TO-220F1
FEATURES
* 1.0A, 900V, RDS(on)=16Ω @VGS =10V
* High switching speed
* Improved dv/dt capability
* 100% avalanche tested
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1N90G-TA3-T
1N90G-TF3-T
1N90G-TF1-T
1
2
D
D
D
3
1N90L-TA3-T
1N90L-TF3-T
1N90L-TF1-T
TO-220
TO-220F
TO-220F1
G
G
G
S
S
S
Tube
Tube
Tube
Note: Pin Assignment: G: Gate D: Drain
S: Source
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Copyright © 2011 Unisonic Technologies Co., Ltd
QW-R502-496.b
1N90
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
900
±30
1.0
V
Continuous
A
Drain Current
Pulsed (Note 1)
IDM
4.0
A
Avalanche Current (Note 1)
Avalanche Energy
IAR
1.0
A
Single Pulsed (Note 2)
Repetitive (Note 1)
EAS
90
mJ
mJ
V/ns
W
EAR
4.5
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.0
TO-220
2.5
Power Dissipation
PD
TO-220F/TO-220F1
45
W
Junction Temperature
Storage Temperature
TJ
+150
-55~+150
°C
°C
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
62.5
UNIT
°C/W
°C/W
°C/W
°C/W
TO-220
Junction to Ambient
Junction to Case
θJA
TO-220F/TO-220F1
TO-220
62.5
3.13
θJC
TO-220F/TO-220F1
5.35
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1N90
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
900
V
ID=250μA,
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ
1.0
V/°C
Referenced to 25°C
VDS=900V, VGS=0V
VDS=640V, TC=125°C
VDS=0V ,VGS=30V
VDS=0V ,VGS=-30V
10
µA
µA
nA
nA
Drain-Source Leakage Current
Gate-Source Leakage Current
IDSS
IGSS
100
100
-100
Forward
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
3.0
5.0
V
ꢀ
S
Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC PARAMETERS
Input Capacitance
RDS(ON) VGS=10V, ID=0.5A
10.3 16.0
0.75
gFS
VDS=50V, ID=0.5A (Note 4)
CISS
COSS
CRSS
150
20
195
26
pF
pF
pF
V
DS=25V,VGS=0V,f=1.0MHz
DS=640V, VGS=10V, ID=1.0A
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
2.7
3.5
QG
QGS
QGD
tD(ON)
tR
5.5
1.1
3.3
10
7.2
nC
nC
nC
ns
ns
ns
ns
V
Gate-Source Charge
(Note 4,5)
Gate-Drain Charge
Turn-ON Delay Time
30
60
40
60
Turn-ON Rise Time
VDD=400V, ID=1.0A, RG=25ꢀ
(Note 4,5)
25
Turn-OFF Delay Time
Turn-OFF Fall Time
tD(OFF)
tF
15
25
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
IS
1.0
4.0
1.4
A
A
ISM
VSD
tRR
IS =1.0A, VGS=0V
V
VGS=0V, IS=1.0A,
dIF/dt=100A/μs (Note 4)
300
0.6
ns
μC
QRR
Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L=170mH, IAS=1.0A, VDD= 50V, RG=25ꢀ, Starting TJ=25°C
3. ISD ≤1.0A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
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1N90
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
RG
L
-
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
Gate Pulse Width
D=
VGS
Gate Pulse Period
10V
(Driver)
I
FM, Body Diode Forward Current
ISD
di/dt
(DUT)
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
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1N90
Preliminary
Power MOSFET
Gate Charge Test Circuit
Gate Charge Waveforms
VGS
Same Type
as DUT
QG
12V
10V
200nF
VDS
QGS
QGD
50kꢀ
300nF
VGS
DUT
3mA
Charge
Unclamped Inductive Switching Waveforms
Unclamped Inductive Switching Test Circuit
VDS
1
2
BVDSS
BVDSS-VDD
2
EAS
=
LIAS
BVDSS
IAS
RG
ID
L
10V
ID(t)
DUT
tP
VDD
VDD
VDS(t)
Time
tP
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1N90
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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