1N70G-TN3-R [UTC]
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR;
| 型号： | 1N70G-TN3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 文件： | 总8页 (文件大小：308K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
1N70
Power MOSFET
1.2A, 700V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 1N70 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) < 13.5Ω @ VGS = 10V, ID = 0.6A
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
3
S
S
S
S
S
1N70L-TM3-T
1N70L-TMA-T
1N70L-TN3-R
1N70L-T92-B
1N70L-T92-K
1N70G-TM3-T
1N70G-TMA-T
1N70G-TN3-R
1N70G-T92-B
1N70G-T92-K
TO-251
TO-251L
TO-252
TO-92
G
G
G
G
G
D
D
D
D
D
Tube
Tube
Tape Reel
Tape Box
Bulk
TO-92
Note: Pin Assignment: G: Gate D: Drain
S: Source
1N70L-TM3-T
(1) B: Tape Box, K: Bulk, R: Tape Reel, T: Tube
(2) TM3: TO-251, TMA: TO-251L, TN3: TO-252,
T92: TO-92
(1)Packing Type
(2)Package Type
(3)Green Package
(3) L: Lead Free, G: Halogen Free and Lead Free
MARKING
TO-251 / TO-251L / TO-252
TO-92
UTC
L: Lead Free
1N70
G: Halogen Free
Data Code
1
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1N70
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
IAR
RATINGS
700
±30
1.2
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
V
Avalanche Current (Note 2)
Continuous Drain Current
Pulsed Drain Current (Note 2)
A
ID
1.2
A
IDM
4.8
A
Single Pulsed
Repetitive
EAS
50
mJ
mJ
V/ns
Avalanche Energy (Note 2)
EAR
4.0
Peak Diode Recovery dv/dt (Note 3)
TO-251/TO-251L
dv/dt
4.5
28
W
TO-252
TO-92
Power Dissipation
PD
1.6
W
°C
°C
°C
Junction Temperature
Operating Temperature
Storage Temperature
TJ
+150
TOPR
TSTG
-55 ~ +150
-55 ~ +150
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 60mH, IAS = 1A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
110
UNIT
°C/W
°C/W
°C/W
°C/W
TO-251/TO-251L
TO-252
Junction to Ambient
Junction to Case
θJA
TO-92
140
TO-251/TO-251L
TO-252
4.53
θJC
TO-92
79
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1N70
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
VGS = 0V, ID = 250μA
VDS = 700V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
700
V
10
μA
Forward
Reverse
100 nA
-100 nA
V/°C
Gate-Source Leakage Current
IGSS
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID = 250μA
0.4
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250μA
2.0
4.0
9.3 13.5
V
VGS = 10V, ID = 0.6A
Ω
CISS
COSS
CRSS
190 220 pF
Output Capacitance
VDS=25V, VGS=0V, f=1MHz
25
20
35
25
pF
pF
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
tR
tD(OFF)
tF
33
45
62
31
12
3.5
2.2
45
60
80
45
18
ns
ns
Turn-On Rise Time
VDD=30V, ID=0.5A, RG=25Ω
(Note 2,3)
Turn-Off Delay Time
ns
Turn-Off Fall Time
ns
Total Gate Charge
QG
nC
nC
nC
VDS=50V, VGS=10V, ID=1.3A
(Note 2,3)
Gate-Source Charge
QGS
QGD
Gate-Drain Charge
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
VSD
VGS=0V, IS = 1.2A
1.4
1.2
V
A
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
4.8
A
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2%
3. Essentially Independent of Operating Temperature
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1N70
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
P. W.
VGS
(Driver)
Period
D=
P.W.
Period
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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1N70
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
L
VDS
BVDSS
IAS
RD
VDD
ID(t)
VDS(t)
VDD
10V
D.U.T.
tp
Time
tp
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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1N70
Power MOSFET
TYPICAL CHARACTERISTICS
Output Characteristics
Transfer Characteristics
VGS
Top: 15.0V
10.0V
VDS=50V
250μs Pulse Test
8.0V
7.0V
6.5V
6.0V
100
10-1
10-2
Bottorm:5.5V
100
125℃
25℃
-40℃
250μs Pulse Test
TC=25℃
10-1
101
10-1
100
2
4
6
8
10
Gate-Source Voltage, VGS (V)
Drain-Source Voltage, VDS (V)
Source- Drain Diode Forward Voltage
On-Resistance vs. Drain Current
30
TJ=25℃
VGS=0V
250μs Pulse Test
25
20
VGS=10V
VGS=20V
100
15
10
5
125℃
25℃
10-1
0.2 0.4
0
1.5
Drain Current, ID (A)
0.0
1.0
2.0
2.5
0.5
0.6 0.8 1.0 1.2 1.4 1.6
Source-Drain Voltage, VSD (V)
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1N70
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Max. Drain Current vs. Case Temperature
Max. Safe Operating Area
1.2
0.9
Operation in This Area is
Limited by RDS(on)
101
100
100μs
1ms
10ms
DC
0.6
0.3
0.0
10-1
Tc=25℃
TJ=150℃
Single Pulse
10-2
100
101
Drain-Source Voltage, VDS (V)
103
25
50
75
100
125
102
150
Case Temperature, TC (℃)
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1N70
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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