13N40 [UTC]
13A, 400V N-CHANNEL POWER MOSFET; 13A , 400V N沟道功率MOSFET![13N40](http://pdffile.icpdf.com/pdf1/p00162/img/icpdf/13N40_906501_icpdf.jpg)
型号: | 13N40 |
厂家: | ![]() |
描述: | 13A, 400V N-CHANNEL POWER MOSFET |
文件: | 总4页 (文件大小:152K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
13N40
Preliminary
Power MOSFET
13A, 400V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 13N40 is an N-channel mode power MOSFET using
UTC’ s advanced technology to provide customers with planar stripe
and DMOS technology. This technology specializes in allowing a
minimum on-state resistance and superior switching performance. It
also can withstand high energy pulse in the avalanche and
commutation mode.
The UTC 13N40 is universally applied in electronic lamp ballast
based on half bridge topology and high efficient switched mode
power supply.
FEATURES
* RDS(ON)=0.35Ω @ VGS=10V
* High switching speed
* 100% avalanche tested
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
TO-220F
Packing
Tube
Lead Free
Halogen Free
13N40G-TF3-T
1
2
3
13N40L-TF3-T
G
D
S
Note: Pin Assignment: G: Gate D: Drain
S: Source
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Copyright © 2011 Unisonic Technologies Co., Ltd
QW-R502-687.a
13N40
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
400
±30
V
Continuous (TC=25°C)
13
A
Drain Current
Pulsed (Note 2)
IDM
52
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
705
mJ
W
Power Dissipation
PD
48
Junction Temperature
Storage Temperature Range
TJ
+150
-55~+150
°C
°C
TSTG
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 8.34mH, IAS = 13A, VDD = 50V, RG= 25Ω ,Starting TJ = 25°C
THERMAL DATA
PARAMETER
SYMBOL
θJA
RATINGS
60
UNIT
°C/W
°C/W
Junction to Ambient
Junction to Case
θJC
2.58
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
ID=250µA, VGS=0V
VDS=400V, VGS=0V
GS=+30V, VDS=0V
400
V
1
µA
Forward
Reverse
V
+100 nA
-100 nA
Gate- Source Leakage Current
IGSS
VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=6.5A
2.0
4.0
V
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
0.35
ꢀ
CISS
COSS
CRSS
1283
218
pF
pF
pF
Output Capacitance
VGS=0V, VDS=25V, f=1.0MHz
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Turn-ON Delay Time
Rise Time
120
tD(ON)
tR
tD(OFF)
tF
16
20
ns
ns
ns
ns
VDD=200V, ID=13A, RG=25ꢀ
(Note 1, 2)
Turn-OFF Delay Time
Fall-Time
100
42
Total Gate Charge
QG
79 100 nC
V
V
DS=320 V, ID=13A,
GS=10 V (Note 1,2)
Gate-Source Charge
Gate-Drain Charge
QGS
QGD
7.2 12
nC
nC
43
55
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
VSD
IS
IS=13A, VGS=0V
1.2
13
52
V
A
A
ISM
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-687.a
www.unisonic.com.tw
13N40
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
VGS
(Driver)
Period
D=
P.W.
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-687.a
www.unisonic.com.tw
13N40
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
10%
VGS
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-687.a
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