13005ECG-D-T60-K [UTC]
NPN SILICON TRANSISTOR;
| 型号： | 13005ECG-D-T60-K |
| 厂家： | 
Unisonic Technologies |
| 描述： | NPN SILICON TRANSISTOR |
| 文件： | 总4页 (文件大小：164K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
13005EC
Preliminary
NPN SILICON TRANSISTOR
NPN SILICON POWER
TRANSISTORS
DESCRIPTION
These devices are designed for high-voltage, high-speed
power switching inductive circuits where fall time is critical.
They are particularly suited for 115 and 220 V SWITCHMODE.
FEATURES
* VCEO(SUS)= 850 V
* Reverse bias SOA with inductive loads @ TC = 100°С
* Inductive switching matrix 2 to 4 Amp, 25 and 100°С
tC @ 3A, 100°С is 180 ns (Typ)
* 850V blocking capability
* SOA and switching applications information
APPLICATIONS
* Switching regulator’s, inverters
* Motor controls
* Solenoid/Relay drivers
* Deflection circuits
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
B
B
2
C
C
3
E
E
13005ECL-x-TM3-T
13005ECL-x-T60-K
13005ECG-x-TM3-T
13005ECG-x-T60-K
TO-251
TO-126
Tube
Bulk
13005ECL-x-TM3-T
(1) T: Tube, B: Bulk
(1)Packing Type
(2) TM3: TO-251, T60: TO-126
(3) x: refer to Classification of hFE1
(4) L: Lead Free, G: Halogen Free
(2)Package Type
(3)Rank
(4)Lead Free
MARKING INFORMATION
PACKAGE
MARKING
TO-251
TO-126
www.unisonic.com.tw
1 of 4
Copyright © 2014 Unisonic Technologies Co., Ltd
QW-R213-022.d
13005EC
Preliminary
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VCEO(SUS)
VCES
VCBO
VEBO
IC
RATINGS
UNIT
V
Collector-Emitter Voltage
Collector-Emitter Voltage (VBE=0)
Collector-Base Voltage
400
850
V
850
V
Emitter Base Voltage
9
V
Continuous
Peak (1)
4
A
Collector Current
ICM
8
A
Continuous
Peak (1)
IB
2
A
Base Current
IBM
4
A
Continuous
Peak (1)
IE
6
A
Emitter Current
IEM
12
10
A
TO-251
W
W
°С
°С
Power Dissipation at TC=25°С
PD
TO-126
8
Junction Temperature
TJ
-65 ~ +150
-65 ~ +150
Storage Temperature Range
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
95
UNIT
TO-251
TO-126
TO-251
TO-126
Junction to Ambient
Junction to Case
θJA
°С/W
100
13
θJC
°С/W
16.25
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
QW-R213-022.d
www.unisonic.com.tw
13005EC
Preliminary
NPN SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS (TC=25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
OFF CHARACTERISTICS (Note 1)
Collector-Emitter Sustaining Voltage
VCEO(SUS) IC=10mA , IB=0
VCBO=Rated Value, VBE(OFF)=1.5V
VCBO=Rated Value,
BE(OFF)=1.5V, TC=100°С
850
V
1
Collector Cutoff Current
ICBO
IEBO
mA
5
V
Emitter Cutoff Current
VEB=9V, IC=0
1
mA
ON CHARACTERISTICS (Note 1)
hFE1
hFE2
hFE3
IC=0.5A, VCE=5V
IC=1A, VCE=5V
IC=2A, VCE=5V
IC=1A, IB=0.2A
IC=2A, IB=0.5A
IC=4A, IB=1A
15
10
8
50
60
40
0.5
0.6
1
DC Current Gain
V
V
V
V
V
V
V
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=2A, IB=0.5A, TA=100°С
IC=1A, IB=0.2A
1
1.2
1.6
1.5
Base-Emitter Saturation Voltage
VBE(SAT) IC=2A, IB=0.5A
IC=2A, IB=0.5A, TC=100°С
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
Output Capacitance
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
fT
IC=500mA, VCE=10V, f=1MHz
VCB=10V, IE=0, f=0.1MHz
4
MHz
pF
COB
65
tD
tR
tS
tF
0.025 0.1
μs
μs
μs
μs
Rise Time
0.3
1.7
0.4
0.7
4
VCC=125V, IC=2A, IB1=IB2=0.4A,
tP=25μs, Duty Cycle≤1%
Storage Time
Fall Time
0.9
Note: 1. Pulse Test: Pulse Width=5ms, Duty Cycle≤10%
Note: 2. Pulse Test: PW=300μs, Duty Cycle≤2%
CLASSIFICATION OF hFE1
RANK
A
B
C
D
E
RANGE
15 ~ 20
20 ~ 25
25 ~ 30
30 ~ 40
40 ~ 50
UNISONIC TECHNOLOGIES CO., LTD
3 of 4
QW-R213-022.d
www.unisonic.com.tw
13005EC
Preliminary
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
4 of 4
QW-R213-022.d
www.unisonic.com.tw
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