11N60K-MT [UTC]
N-CHANNEL DEPLETION-MODE POWER MOSFET;
| 型号： | 11N60K-MT |
| 厂家： | 
Unisonic Technologies |
| 描述： | N-CHANNEL DEPLETION-MODE POWER MOSFET |
| 文件： | 总6页 (文件大小：220K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
11N60K-MT
Preliminary
Power MOSFET
11A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 11N60K-MT is an N-channel enhancement mode
power MOSFET. It uses UTC advanced planar stripe, DMOS
technology to provide customers perfect switching performance,
minimal on-state resistance. It also can withstand high energy pulse
in the avalanche and commutation mode.
The UTC 11N60K-MT is universally applied in electronic lamp
ballasts based on half bridge topology, high efficiency switched
mode power supplies, active power factor correction, etc.
FEATURES
* RDS(ON) < 1.00 Ω @ VGS = 10 V, ID = 5.5 A
* Fast Switching
* With 100% Avalanche Tested
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Pin Assignment
Ordering Number
Package
Packing
Tube
Lead Free
Halogen Free
11N60KG-TF2-T
D: Drain S: Source
1
2
3
11N60KL-TF2-T
TO-220F2
G
D
S
Note: Pin Assignment: G: Gate
MARKING
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Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
600
UNIT
V
Drain to Source Voltage
Gate to Source Voltage
VDSS
VGSS
±30
V
TC=25°C
11 (Note 2)
7 (Note 2)
44 (Note 2)
440
A
Continuous Drain Current
ID
TC=100°C
A
Pulsed Drain Current (Note 3)
IDM
EAS
A
Single Pulsed Avalanche Energy(Note 4)
Peak Diode Recovery dv/dt (Note 5)
Power Dissipation
mJ
V/ns
W
dv/dt
4.5
48
PD
Derate above 25°C
0.38
W/°C
°C
°C
Junction Temperature
TJ
+150
Storage Temperature
TSTG
-55 ~ +150
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Drain current limited by maximum junction temperature
3. Repetitive Rating : Pulse width limited by maximum junction temperature
4. L=7.27mH, IAS=11A, VDD= 50V, RG=25Ω, Starting TJ=25°C
5. ISD ≤11A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C
THERMAL DATA
PARAMETER
SYMBOL
θJA
RATINGS
62.5
UNIT
°C/W
°C/W
Junction to Ambient
Junction to Case
θJC
2.58
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11N60K-MT
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
600
V
V/°C
µA
Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ ID=250μA,Referenced to 25°C
0.5
VDS=600V, VGS=0V
10
Drain-Source Leakage Current
IDSS
IGSS
VDS=600V, TJ=125°C
VDS=0V ,VGS=±30V
100
µA
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
±100 nA
VGS(TH)
RDS(ON)
VDS= VGS, ID=250µA
VGS=10V, ID=5.5A
2.0
4.0
0.61 1.00
V
Ω
CISS
COSS
CRSS
850 1200 pF
VDS=25V,VGS=0V,f=1.0MHz
Output Capacitance
139 150
pF
pF
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
10
20
55
QG
QGS
QGD
tD(ON)
tR
35
10
9
nC
nC
nC
ns
ns
ns
ns
VDS=30V, VGS=10V, ID=0.5A
Gate-Source Charge
(Note 1, 2)
Gate-Drain Charge
Turn-ON Delay Time
74
95
90
Turn-ON Rise Time
VDD=50V, ID=1.3A, RG=3Ω
(Note 1, 2)
120
Turn-OFF Delay Time
Turn-OFF Fall Time
tD(OFF)
tF
180 200
96
120
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
IS
ISM
VSD
trr
11
44
A
A
IS =11A, VGS=0V
1.4
V
VGS=0V, IS=11A,
dIF/dt=100A/μs (Note 1)
90
ns
μC
QRR
1.5
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
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11N60K-MT
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
VGS
(Driver)
Period
D=
P.W.
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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11N60K-MT
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
10%
VGS
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
Time
tp
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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11N60K-MT
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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