11N40G-TA3-T [UTC]
11.4A, 400V N-CHANNEL POWER MOSFET; 11.4A ， 400V N沟道功率MOSFET
| 型号： | 11N40G-TA3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | 11.4A, 400V N-CHANNEL POWER MOSFET |
| 文件： | 总6页 (文件大小：240K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
11N40
Power MOSFET
11.4A, 400V N-CHANNEL
POWER MOSFET
DESCRIPTION
The 11N40 uses UTC’s advanced proprietary, planar stripe,
DMOS technology to provide excellent RDS(ON), low gate charge
and operation with low gate voltages. This device is suitable for
use as a load switch or in PWM applications.
FEATURES
* RDS(ON) = 0.52Ω @VGS = 10 V
* Ultra Low Gate Charge ( Typical 27 nC )
* Low Reverse Transfer Capacitance ( CRSS = Typical 20 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
D
D
3
S
S
11N40L-TA3-T
11N40L-TF3-T
11N40G-TA3-T
11N40G-TF3-T
TO-220
Tube
Tube
G
G
TO-220F
Note: Pin Assignment: G: Gate D: Drain
S: Source
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Copyright © 2011 Unisonic Technologies Co., Ltd
QW-R502-219.D
11N40
Power MOSFET
ABSOLUTE MAXIMUM RATING (TC =25℃, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
VDSS
VGSS
ID
RATINGS
UNIT
400
±30
V
V
A
A
A
Continuous Drain Current (TC = 25℃)
Pulsed Drain Current (Note 2)
Avalanche Current (Note 2)
11.4
46
IDM
IAR
11.4
520
Single Pulsed(Note 3)
Repetitive(Note 2)
EAS
Avalanche Energy
mJ
EAR
14.7
4.5
Peak Diode Recovery dv/dt (Note 4)
Power Dissipation
dv/dt
V/ns
W
147
PD
Derate above 25℃
1.18
150
W/℃
℃
Junction Temperature
Storage Temperature
TJ
TSTG
-55 ~ +150
℃
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L=7mH, IAS=11.4A, VDD=50V, RG=25Ω, Satarting TJ=25°C.
4. ISD ≤ 11.4A, di/dt ≤ 200A/μs, VDD ≤BVDSS, Satarting TJ=25°C.
THERMAL DATA
PARAMETER
SYMBOL
θJA
RATINGS
62.5
UNIT
℃/W
℃/W
Junction to Ambient
Junction to Case
θJC
0.85
UNISONIC TECHNOLOGIES CO., LTD
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11N40
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
IDSS
VGS =0 V, ID =250 µA
VDS =400V, VGS =0 V
DS =320V, TC =125°C
VDS =0 V, VGS = ±30 V
400
V
1
Zero Gate Voltage Drain Current
µA
V
10
Gate-Body Leakage Current
Breakdown Voltage Temperature Coefficient
IGSS
±100 nA
mV/℃
0.42
ΔBVDSS/ΔTJ ID =250 µA, Referenced to25°C
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance
DYNAMIC PARAMETERS
Input Capacitance
VGS(TH) VDS =VGS, ID =250 µA
RDS(ON) VGS = 10 V, ID = 5.7 A
2.0
4.0
V
0.42 0.52
Ω
CISS
1100 1400
180 240
VDS =25V, VGS =0V, f=1MHz
pF
Output Capacitance
COSS
CRSS
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Turn-ON Delay Time
20
30
tD(ON)
tR
tD(OFF)
tF
30
70
Turn-ON Rise Time
VDD=200V, ID=11.4A,
100 210
ns
RGEN =25ꢀ(Note 1, 2)
Turn-OFF Delay Time
Turn-OFF Fall-Time
60
60
130
130
35
Total Gate Charge
QG
27
V
DS =320V, VGS =10V,
nC
Gate Source Charge
QGS
QGD
7.3
12.3
ID =11.4A (Note 1, 2)
Gate Drain Charge
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source
Diode Forward Current
VSD
IS=11.4 A,VGS=0V
1.5
V
A
IS
11.4
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
46
Reverse Recovery Time
trr
VGS = 0V, dIF /dt = 100 A/ s,
IS =11.4A (Note 1)
240
1.8
ns
Reverse Recovery Charge
QRR
µC
Notes: 1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.
2. Independent of operating temperature.
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11N40
Power MOSFET
TEST CIRCUIT
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
VDS
BVDSS
IAS
RD
VDD
ID(t)
VDS(t)
VDD
10V
D.U.T.
tp
Time
tp
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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11N40
Power MOSFET
TEST CIRCUIT(Cont.)
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
P. W.
VGS
(Driver)
Period
D=
P.W.
Period
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
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11N40
Power MOSFET
TYPICAL CHARACTERISTICS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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