10N40G-TA3-T [UTC]
10.5A, 400V N-CHANNEL POWER MOSFET; 10.5A ， 400V N沟道功率MOSFET
| 型号： | 10N40G-TA3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | 10.5A, 400V N-CHANNEL POWER MOSFET |
| 文件： | 总4页 (文件大小：170K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
10N40
Preliminary
Power MOSFET
10.5A, 400V N-CHANNEL
POWER MOSFET
1
TO-220
DESCRIPTION
The UTC 10N40 is an N-channel mode power MOSFET using
UTC’ s advanced technology to provide customers with planar stripe
and DMOS technology. This technology specializes in allowing a
minimum on-state resistance and superior switching performance. It
also can withstand high energy pulse in the avalanche and
commutation mode.
1
TO-220F1
The UTC 10N40 is universally applied in electronic lamp ballast
based on half bridge topology and high efficient switched mode
power supply.
FEATURES
* High switching speed
* RDS(ON)=0.65Ω @ VGS=10V
* 100% avalanche tested
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
D
D
3
S
S
10N40L-TA3-T
10N40L-TF1-T
10N40G-TA3-T
10N40G-TF1-T
TO-220
TO-220F1
G
G
Tube
Tube
Note: Pin Assignment: G: Gate D: Drain
S: Source
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Copyright © 2011 Unisonic Technologies Co., Ltd
QW-R502-549.b
10N40
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
400
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
±30
V
Continuous (TC=25°C)
Pulsed (Note 2)
10.5
42
A
Drain Current
IDM
A
Avalanche Current (Note 2)
Single Pulsed (Note 3)
Repetitive (Note 4)
Peak Diode Recovery dv/dt (Note 4)
IAR
11
A
EAS
360
mJ
mJ
V/ns
W
Avalanche Energy
EAR
13.5
4.5
dv/dt
TO-220
TO-220F1
TO-220
135
Power Dissipation
Derate above 25°C
44
W
PD
1.07
0.35
+150
-55~+150
W/°C
W/°C
°C
TO-220F1
Junction Temperature
Storage Temperature
TJ
TSTG
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 5.7mH, IAS = 10.5A, VDD = 50V, RG = 25ꢀ, Starting TJ = 25°C
4. ISD ≤ 10.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
62.5
UNIT
°C/W
Junction to Ambient
θJA
TO-220
TO-220F1
0.93
Junction to Case
θJC
°C/W
2.86
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-549.b
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10N40
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
400
V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ Reference to 25°C, ID=250µA
0.54
V/°C
µA
Drain-Source Leakage Current
IDSS
VDS=400V, VGS=0V
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
1
Forward
Reverse
+100 nA
-100 nA
Gate- Source Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=5.25A
2.0
4.0
0.5 0.65
V
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
ꢀ
CISS
COSS
CRSS
840 1090 pF
250 325 pF
80 110 pF
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
QG
QGS
QGD
tD(ON)
tR
28
4
35 nC
nC
VGS=10V, VDS=320V, ID=10.5A
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
(Note 1, 2)
15
14
nC
40
ns
VDD=200V, ID=10.5A, RG=25ꢀ
(Note 1, 2)
89 190 ns
81 170 ns
81 170 ns
Turn-OFF Delay Time
Fall-Time
tD(OFF)
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
IS
ISM
VSD
trr
10.5
42
A
A
IS=10.5A, VGS=0V
1.4
V
IS=10.5A, VGS=0V,
dIF/dt=100A/µs (Note 1)
290
2.4
ns
µC
QRR
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-549.b
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10N40
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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QW-R502-549.b
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