首页 |元器件品牌

100N20L-TN3-T [UTC]

100A, 15V N-CHANNEL POWER TRENCH MOSFET;
100N20L-TN3-T
型号： 100N20L-TN3-T
厂家： Unisonic Technologies    Unisonic Technologies
描述：

100A, 15V N-CHANNEL POWER TRENCH MOSFET
文件： 总3页 (文件大小：133K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
UNISONIC TECHNOLOGIES CO., LTD  
100N02  
Preliminary  
Power MOSFET  
100A, 15V N-CHANNEL  
POWER TRENCH MOSFET  
„
DESCRIPTION  
The UTC 100N02 is an N-channel Power Trench MOSFET,  
it uses UTC’s advanced technology to provide customers with a  
minimum on-state resistance, low gate charge and high  
switching speed.  
The UTC 100N02 is generally applied in synchronous  
Rectification or DC to DC convertor.  
„
FEATURES  
* RDS(ON)<12mΩ@ VGS=10V, ID =55A  
* Low Gate Charge (Typical 46nC)  
* High Switching Speed  
* High Power and Current Handling Capability  
„ ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
Lead Free  
Halogen Free  
100N20G-TM3-T  
100N20G-TN3-T  
100N20G-TN3-R  
1
2
D
D
D
3
S
S
S
100N20L-TM3-T  
100N20L-TN3-T  
100N20L-TN3-R  
TO-251  
TO-252  
TO-252  
G
G
G
Tube  
Tube  
Tape Reel  
Note: Pin Assignment: G: Gate D: Drain  
S: Source  
www.unisonic.com.tw  
1 of 3  
Copyright © 2012 Unisonic Technologies Co., Ltd  
QW-R502-860.a  
100N02  
Preliminary  
Power MOSFET  
„
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VDSS  
VGSS  
ID  
RATINGS  
15  
UNIT  
V
Drain-Source Voltage  
Gate-Source Voltage  
±8  
V
Continuous  
Pulsed  
100  
A
Drain Current  
IDM  
400  
A
Avalanche Energy  
Single Pulsed  
EAS  
12  
mJ  
W
Power Dissipation  
PD  
54  
Junction Temperature  
Storage Temperature Range  
TJ  
+150  
-55~+150  
°C  
°C  
TSTG  
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
„
THERMAL CHARACTERISTICS  
PARAMETER  
SYMBOL  
θJA  
RATINGS  
62.5  
UNIT  
°C/W  
°C/W  
Junction to Ambient  
Junction to Case  
θJC  
2.3  
„
ELECTRICAL CHARACTERISTICS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN TYP MAX UNIT  
OFF CHARACTERISTICS  
Drain-Source Breakdown Voltage  
Drain-Source Leakage Current  
BVDSS  
IDSS  
ID=250µA, VGS=0V  
VDS=15V  
GS=+8V  
15  
V
1
μA  
Forward  
Reverse  
V
±100 nA  
±100 nA  
Gate-Source Leakage Current  
IGSS  
VGS=-8V  
ON CHARACTERISTICS  
Gate Threshold Voltage  
VGS(TH)  
RDS(ON)  
ID=250µA  
0.5  
1.2  
V
Static Drain-Source On-State Resistance  
DYNAMIC PARAMETERS  
Input Capacitance  
VGS=4.5V, ID=55A  
12 mꢀ  
CISS  
COSS  
CRSS  
3565  
1310  
395  
pF  
pF  
pF  
Output Capacitance  
VGS=0V, VDS=20V, f=1.0MHz  
Reverse Transfer Capacitance  
SWITCHING PARAMETERS  
Total Gate Charge  
QG  
QGS  
QGD  
tD(ON)  
tR  
46  
6.9  
9.8  
9
60  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
VGS=10V, VDD=12V, ID=0.3A,  
Gate to Source Charge  
Gate to Drain Charge  
Turn-ON Delay Time  
Rise Time  
IG=100µA  
106  
53  
VDD=10V, ID=0.16A, RG=25ꢀ,  
VGS=0~10V  
Turn-OFF Delay Time  
Fall-Time  
tD(OFF)  
tF  
41  
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS  
Drain-Source Diode Forward Voltage VSD IS=55A  
1.3  
V
UNISONIC TECHNOLOGIES CO., LTD  
2 of 3  
QW-R502-860.a  
www.unisonic.com.tw  
100N02  
Preliminary  
Power MOSFET  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 3  
QW-R502-860.a  
www.unisonic.com.tw  

相关型号：

100N2AF

 Fixed Attenuator, 0MHz Min, 2200MHz Max
ANAREN

100N30AF

 Fixed Attenuator, 0MHz Min, 2500MHz Max
ANAREN

100N3AF

 Fixed Attenuator, 0MHz Min, 2500MHz Max
ANAREN

100N3LF3

 N-channel 30V - 0.0045OHM - 80A - DPAK - IPAK Planar STripFET TM II Power MOSFET
STMICROELECTR

100N4AF

 Fixed Attenuator, 0MHz Min, 2500MHz Max
ANAREN

100N5AF

 Fixed Attenuator, 0MHz Min, 3000MHz Max
ANAREN

100N9AF

 Fixed Attenuator, 0MHz Min, 2200MHz Max
ANAREN

100NA0.47MCA5X11

 Aluminum Electrolytic Capacitor, Non-polarized, Aluminum (wet), 100V, 20% +Tol, 20% -Tol, 0.47uF, Through Hole Mount
RUBYCON

100NA0.47MFA5X11

 Aluminum Electrolytic Capacitor, Polarized, Aluminum (wet), 100V, 20% +Tol, 20% -Tol, 0.47uF, Through Hole Mount, RADIAL LEADED
RUBYCON

100NA0.47MKC5X11

 Aluminum Electrolytic Capacitor, Non-polarized, Aluminum (wet), 100V, 20% +Tol, 20% -Tol, 0.47uF, Through Hole Mount
RUBYCON

100NA2.2MKC5X11

 Aluminum Electrolytic Capacitor, Non-polarized, Aluminum (wet), 100V, 20% +Tol, 20% -Tol, 2.2uF, Through Hole Mount
RUBYCON

100NDD

 Diode – Diode Module
NAINA
©2020 ICPDF网 联系我们和版权申明