UTL1426L-S08-R [UTC]
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR; N沟道增强型网络场效晶体管
| 型号： | UTL1426L-S08-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 文件： | 总5页 (文件大小：208K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UTL1426
Power MOSFET
N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT
TRANSISTOR
DESCRIPTION
SOP-8
The UTL1426 uses UTC’s advanced trench technology to
provide excellent RDS(ON), low gate charge and operation with low
gate voltages. This device is suitable for use as a load switch or
in PWM applications.
FEATURES
* RDS(ON)< 10.5 mΩ @VGS=10V
* RDS(ON)< 12.5 mΩ @VGS=4.5V
* Low capacitance
Lead-free:
Halogen-free: UTL1426G
UTL1426L
* Low gate charge
* Fast switching capability
* Avalanche energy specified
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Package
SOP-8
Packing
Normal
Lead Free Plating
UTL1426L-S08-R
Halogen Free
UTL1426G-S08-R
UTL1426-S08-R
Tape Reel
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
1 of 5
QW-R502-264.A
UTL1426
Power MOSFET
PIN CONFIGURATION
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R502-264.A
UTL1426
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
30
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
±12
V
Continuous Drain Current
Pulsed Drain Current
46
A
IDM
120
A
Avalanche Current
IAR
35
A
Repetitive avalanche energy L=0.3mH
Power Dissipation
EAR
PD
184
mJ
W
°C
TC=25°C
43
Junction Temperature
Storage Temperature
TJ
+175
-55 ~ +175
TSTG
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
THERMAL DATA
PARAMETER
SYMBOL
θJA
MIN
TYP
53
MAX
64
UNIT
°C/W
Junction-to-Ambient
Junction-to-Case
θJC
2.4
3.5
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
BVDSS
IDSS
VGS=0V, ID=250µA
30
V
VDS=24V, VGS=0V
VDS=0V, VGS=±12V
1
uA
µA
IGSS
0.1
VGS(TH)
ID(ON)
VDS=VGS, ID=250µA
VDS=5V, VGS=10V
VGS=10V, ID=20A
1
1.55
8.5
2.5
V
A
On State Drain Current
120
10.5
Static Drain-Source On-Resistance
RDS(ON)
mΩ
VGS=4.5V, ID=20A
10.2 12.5
DYNAMIC PARAMETERS
Input Capacitance
CISS
COSS
CRSS
1210 1452
pF
pF
pF
VDS=15V, VGS=0V, f=1MHz
Output Capacitance
330
85
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
tR
tD(OFF)
tF
10
6.3
21
ns
ns
Turn-ON Rise Time
VGS=10V, VDS=15V, RL=0.75ꢀ,
RGEN=3ꢀ
Turn-OFF Delay Time
Turn-OFF Fall-Time
ns
2.8
ns
10V
Total Gate Charge
4.5V
22
10
28
nC
nC
nC
nC
QG
VDS=15V, VGS=10V, ID=20A
Gate Source Charge
Gate Drain Charge
QGS
QGD
3.7
2.7
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
Maximum Body-Diode Continuous
Current
VSD
IS=1A, VGS=0V
0.73
1.0
46
45
V
A
IS
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery
Charge
tRR
QRR
36
47
ns
nC
IF=20A, dI/dt=100A/μs
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 5
QW-R502-264.A
UTL1426
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs. Source to Drain Voltage
Switching Time Waveforms
1.2
1.0
0.8
0.6
0.4
0.2
VDS
90%
10%
VGS
tD(ON)
tD(OFF)
tR
tF
0
0
0.2
0.4
0.6
0.8
1.0
Source to Drain Voltage,VSD (V)
Drain-Source On-State
Resistance Characteristics
12
VGS=10V,
ID=10A
10
8
VGS=4.5V,
ID=10A
6
4
2
0
0
50
Drain to Source Voltage, VDS (mV)
100
150
200
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 5
QW-R502-264.A
UTL1426
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 5
QW-R502-264.A
相关型号：
©2020 ICPDF网 联系我们和版权申明