4N50G-TF3-T [UTC]
4 Amps, 500 Volts N-CHANNEL POWER MOSFET; 4安培, 500伏特N沟道功率MOSFET型号: | 4N50G-TF3-T |
厂家: | Unisonic Technologies |
描述: | 4 Amps, 500 Volts N-CHANNEL POWER MOSFET |
文件: | 总6页 (文件大小:167K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
4N50
Preliminary
Power MOSFET
4 Amps, 500 Volts
N-CHANNEL POWER MOSFET
1
DESCRIPTION
TO-220
The UTC 4N50 is an N-channel mode power MOSFET using
UTC’s advanced technology to provide customers with planar stripe
and DMOS technology. This technology allows a minimum on-state
resistance and superior switching performance. It also can withstand
high energy pulse in the avalanche and commutation mode.
The UTC 4N50 is generally applied in high efficiency switch mode
power supplies, active power factor correction and electronic lamp
ballasts based on half bridge topology.
1
TO-220F
FEATURES
* 4A, 500V, RDS(ON)=2.0Ω @ VGS=10V
* High Switching Speed
* 100% Avalanche Tested
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
4N50L-TA3-T
4N50L-TF3-T
Halogen Free
1
2
D
D
3
S
S
4N50G-TA3-T
4N50G-TF3-T
TO-220
TO-220F
G
G
Tube
Tube
Note: Pin Assignment: G: Gate D: Drain
S: Source
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4N50
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
500
±30
4
V
Continuous (TC=25°C)
Pulsed (Note 1)
A
Drain Current
IDM
16 *
4
A
Avalanche Current (Note 1)
Single Pulsed (Note 2)
Repetitive (Note 3)
IAR
A
EAS
216
8.5
mJ
mJ
V/ns
Avalanche Energy
EAR
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5
TO-220
TO-220F
TO-220
85
TC=25°C
W
28
Power Dissipation
PD
0.67
0.22
+150
-55~+150
Derate above 25°C
W/°C
TO-220F
Junction Temperature
Storage Temperature
TJ
°C
°C
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
* Drain current limited by maximum junction temperature
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
62.5
UNIT
°C/W
TO-220
TO-220F
TO-220
Junction to Ambient
Junction to Case
θJA
62.5
1.47
θJC
°C/W
TO-220F
4.5
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4N50
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
ID=250µA, VGS=0V
500
2.0
V
VDS=500V, VGS=0V
VGS=+30V, VDS=0V
1
µA
Forward
Reverse
+100 nA
-100 nA
Gate- Source Leakage Current
IGSS
VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=2A
4.0
V
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
1.65 2.0
ꢀ
CISS
COSS
CRSS
485 650 pF
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
65
5
90
8
pF
pF
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
QG
QGS
QGD
tD(ON)
tR
11
3
15
nC
nC
nC
ns
ns
ns
ns
VGS=10V, VDS=400V, ID=4A
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
(Note 4, 5)
5
14
21
27
20
38
52
64
50
VDD=250V, ID=4A, RG=25ꢀ
(Note 4, 5)
Turn-OFF Delay Time
Fall-Time
tD(OFF)
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
IS
4
A
A
ISM
16
1.6
VSD
tRR
IS=4A, VGS=0V
V
IS=4A, VGS=0V, dIF/dt=100A/µs
(Note 4)
36
33
ns
µC
QRR
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 27mH, IAS = 4A, VDD = 50V, RG = 25ꢀ, Starting TJ = 25°C
3. ISD ≤ 4A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
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4N50
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Gate Charge Test Circuit
Gate Charge Waveforms
VGS
Same Type
as DUT
QG
12V
10V
200nF
VDS
QGS
QGD
50kꢀ
300nF
VGS
DUT
3mA
Charge
Unclamped Inductive Switching Waveforms
Unclamped Inductive Switching Test Circuit
VDS
1
2
BVDSS
BVDSS-VDD
2
EAS
=
LIAS
BVDSS
IAS
RG
ID
L
10V
ID(t)
DUT
tP
VDD
VDD
VDS(t)
Time
tP
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4N50
Preliminary
Peak Diode Recovery dv/dt Test Circuit & Waveforms
Power MOSFET
+
DUT
VDS
RG
L
-
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
Gate Pulse Width
D=
VGS
Gate Pulse Period
10V
(Driver)
I
FM, Body Diode Forward Current
ISD
di/dt
(DUT)
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
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4N50
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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