2SK2751G-AL3-R [UTC]

Small Signal Field-Effect Transistor,;


型号：	2SK2751G-AL3-R
厂家：	Unisonic Technologies
描述：	Small Signal Field-Effect Transistor,
文件：	总4页 (文件大小：201K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

2SK2751

N-CHANNEL JFET

N-CHANNEL JUNCTION FET



FEATURES

* Low noise-figure (NF).

* High gate to drain voltage V_GDO



APPLICATIONS

* For impedance conversion in low frequency.

* For pyroelectric sensor.

 ORDERING INFORMATION

Pin Assignment

Ordering Number

Package

Packing

2SK2751G-AE3-R

2SK2751G-AL3-R

SOT-23

Tape Reel

SOT-323

Note: Pin Assignment: D: Drain

S: Source

G: Gate

 MARKING

www.unisonic.com.tw

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QW-R206-067.D

2SK2751

N-CHANNEL JFET



ABSOLUTE MAXIMUM RATINGS (T_A=25°C, unless otherwise specified)

PARAMETER

SYMBOL

V_GDS

I_D

RATINGS

UNIT

Gate-Drain Voltage

Drain Current

-40

°C

Gate Current

I_G

Allowable Power Dissipation

Channel Temperature

Storage Temperature

P_D

200

T_CH

+150

-55 ~ +150

T_STG

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



ELECTRICAL CHARACTERISTICS (T_A=25±3°C, unless otherwise specified)

PARAMETER

SYMBOL

V_GDS

V_GSC

I_DSS

TEST CONDITIONS

I_G=-100μA, V_DS=0

MIN

-40

TYP

MAX UNIT

Gate-Drain Voltage

Gate-Source Cut-Off Voltage

Drain-Source Cut-Off Current

Gate-Source Leakage Current

Forward Transfer Admittance

Input Capacitance (Common Source)

Output Capacitance (Common Source)

Reverse Transfer Capacitance

(Common Source)

V_DS=10V, I_D=1μA

V_DS=10V, V_GS=0

-3.5

4.7

-1

1.4

2.5

I_GSS

V_GS=-20V, V_DS=0

| Y_fs|

C_ISS

V_DS=10V, V_GS=0, f=1kHz

C_OSS

V_DS=10V, V_GS=0, f=1MHz

C_RSS

UNISONIC TECHNOLOGIES CO., LTD

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QW-R206-067.D

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2SK2751

N-CHANNEL JFET



TYPICAL CHARACTERISTICS

Power Dissipatio vs. Ambient Temperature

Drain Current vs. Drain Source Voltage

250

200

150

Ta=25°C

VGS=0.6V

0.4V

0.2V

100

-0.2V

120

Ambient Temperature, Ta (℃)

100

140 160

Drain Source Voltage, VDS (V)

Drain Current vs. Gate to Source Voltage

Forward Transfer Admittance vs. Gate to Source Voltage

Ta=-25℃

VDS=10V

25℃

75℃

-1

-0.6

-1.6

-1.2

Gate to Source Voltage, V^GS(V)

-0.2

0.2

0.6

-0.8

-0.4

0.4

Gate to Source Voltage, V^GS(V)

Forward Transfer Admittance vs. Drain Current

VDS=25V

Ta=25℃

Drain Current, I^D(mA)

UNISONIC TECHNOLOGIES CO., LTD

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QW-R206-067.D

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2SK2751

N-CHANNEL JFET

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

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