2SD965AG-S-TN3-R [UTC]
Small Signal Bipolar Transistor,;
| 型号： | 2SD965AG-S-TN3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | Small Signal Bipolar Transistor, 开关 晶体管 |
| 文件： | 总4页 (文件大小：131K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SD965/A
NPN SILICON TRANSISTOR
LOW VOLTAGE HIGH
CURRENT TRANSISTOR
FEATURES
* Collector current up to 5A
* UTC 2SD965: Collector-Emitter voltage up to 20 V
* UTC 2SD965A: Collector-Emitter voltage up to 30 V
APPLICATIONS
* Audio amplifier
* Flash unit of camera
* Switching circuit
Lead-free:
2SD965L/2SD965AL
Halogen-free:2SD965G/2SD965AG
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Normal
Lead Free
Halogen Free
1
B
E
E
B
B
E
E
B
2
C
C
C
C
C
C
C
C
3
E
B
B
E
E
B
B
E
2SD965-x-AB3-R
2SD965-x-T92-B
2SD965-x-T92-K
2SD965-x-TN3-R
2SD965L-x-AB3-R
2SD965L-x-T92-B
2SD965L-x-T92-K
2SD965L-x-TN3-R
2SD965G-x-AB3-R
2SD965G-x-T92-B
2SD965G-x-T92-K
2SD965G-x-TN3-R
SOT-89
TO-92
Tape Reel
Tape Box
Bulk
TO-92
TO-252
SOT-89
TO-92
Tape Reel
Tape Reel
Tape Box
Bulk
2SD965A-x-AB3-R 2SD965AL-x-AB3-R 2SD965AG-x-AB3-R
2SD965A-x-T92-B
2SD965A-x-T92-K
2SD965AL-x-T92-B 2SD965AG-x-T92-B
2SD965AL-x-T92-K 2SD965AG-x-T92-K
TO-92
2SD965A-x-TN3-R 2SD965AL-x-TN3-R 2SD965AG-x-TN3-R
TO-252
Tape Reel
www.unisonic.com.tw
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Copyright © 2009 Unisonic Technologies Co., Ltd
QW-R209-007.C
2SD965/A
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Ta=25°C)
PARAMETER
SYMBOL
VCBO
RATINGS
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
40
20
30
7
2SD965
V
VCEO
VEBO
2SD965A
V
V
SOT-89
TO-92
500
mW
Collector Dissipation
PC
750
1
mW
W
TO-252
Collector Current
IC
TJ
5
A
Junction Temperature
Storage Temperature
150
°C
°C
TSTG
-65 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
SYMBOL
BVCBO
TEST CONDITIONS
IC=100μA, IE=0
MIN TYP MAX UNIT
40
20
30
7
V
V
Collector-Emitter
2SD965
BVCEO
IC=1mA, IB=0
Breakdown Voltage
2SD965A
V
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
BVEBO
ICBO
IE=10μA, IC=0
VCB=10V, IE=0
V
100
100
nA
nA
IEBO
VEB=7V, IC=0
VCE=2V, IC=1mA
VCE=2V, IC=0.5A
VCE=2V, IC=2A
200
150
DC Current Gain(note)
hFE
230
150
800
1
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
VCE(SAT)
fT
IC=3A, IB= 0.1A
VCE=6V, IC=50mA
VCB=20V, IE=0, f=1MHz
V
MHz
pF
Cob
50
CLASSIFICATION OF hFE2
RANK
Q
R
S
RANGE
230-380
340-600
560-800
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
QW-R209-007.C
www.unisonic.com.tw
2SD965/A
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Current Gain-Bandwidth Product
VCE=6V
Collector Output Capacitance
103
102
101
100
103
102
101
100
f=1MHz
IE=0
100
101
102
103
10-1
100
101
102
Collector Current, IC (mA)
Collector-Base Voltage (V)
UNISONIC TECHNOLOGIES CO., LTD
3 of 4
QW-R209-007.C
www.unisonic.com.tw
2SD965/A
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Safe Operation Area
100
10
Single pulse
Ta=25℃
Icp
IC
t=10ms
t=1s
1
0.1
0.01
0.1
1
10
100
Collector-Emitter Voltage, VCE (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
4 of 4
QW-R209-007.C
www.unisonic.com.tw
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