2SC5305(TO-220F) [UTC]
Transistor;
| 型号： | 2SC5305(TO-220F) |
| 厂家： | 
Unisonic Technologies |
| 描述： | Transistor |
| 文件： | 总4页 (文件大小：159K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UTC 2SC5305
NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE HIGH SPEED POWER
SWITCHING TRANSISTOR
FEATURES
* High hFE for Low base drive requirement
* Suitable for half bridge light ballast Applications
* Built-in Free-wheeling Diode makes it specially
suitable for light ballast Applications
1
* Well controlled storage-time spread for all range of hFE
TO-220F
1: Base 2: Collector 3: Emitter
*Pb-free plating product number: 2SC5305L
ABSOLUTE MAXIMUM RATINGS
(TC=25℃, unless otherwise noted.)
PARAMETER
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current (DC)
Collector Current (Pulse)*
Base Current (DC)
Base Current (Pulse)*
Power Dissipation (TC=25℃)
Junction Temperature
Storage Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
V
V
V
A
A
A
A
800
400
12
5
10
2
4
75
150
ICP
IB
IBP
PC
Tj
Tstg
W
℃
℃
-65 ~ 150
THERMAL CHARACTERISTICS
(TC=25℃, unless otherwise noted.)
PARAMETER
SYMBOL
RATINGS
UNIT
Thermal Resistance
℃/W
Junction to Case
Junction to Ambient
RθJC
RθJA
1.65
62.5
UTC UNISONIC TECHNOLOGIES CO., LTD.
1
www.unisonic.com.tw
QW-R219-003,A
UTC 2SC5305
NPN EPITAXIAL SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS
(TC=25℃, unless otherwise noted.)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
SYMBOL
TEST CONDITIONS
MIN
800
400
12
TYP
MAX UNIT
BVCBO IC = 1mA, IE = 0
BVCEO IC = 5mA, IB = 0
BVEBO IE=1mA, IC=0
ICBO
IEBO
hFE1
hFE2
V
V
V
VCB=500V, IE=0
VEB = 9V, IC = 0
VCE=1V, IC=0.8A
10
10
µA
µA
22
8
DC Current Gain
V
CE=1V,IC=2A
IC=0.8A, IB=0.08A
IC=2A, IB=0.4A
IC=0.8A, IB=0.08A
IC=2A, IB=0.4A
0.4
0.5
1.0
1.0
75
150
2
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCE (sat)
V
V
VBE (sat)
Output Capacitance
Turn ON Time
Storage Time
Fall Time
Cob
tON
tSTG
tF
VCB = 10V, f=1MHz
pF
ns
µs
µs
µs
V
CC=300V, IC =2A
B1 = 0.4A, IB2=-1A
RL = 150Ω
CC=15V,VZ=300V
IC = 2A,IB1 = 0.4A
B2 = -0.4A, LC=200µH
I
0.2
2.25
Storage Time
tSTG
V
Fall Time
tF
150
ns
I
IF = 1A
IF = 2A
IF = 0.4A
IF = 1A
IF = 2A
1.5
1.6
Diode Forward Voltage
VF
V
800
1.4
1.9
ns
µs
µs
Reverse recovery time*
(di/dt =10A/µs)
trr
*Pulse Test : Pulse Width=5mS, Duty cycles≦10%
Static Characteristic
DC current Gain
Ta = 125℃
5
100
10
1
IB = 500mA
VCE = 1V
IB = 450mA
IB = 400mA
IB = 350mA
4
25℃
-25℃
IB = 300mA
IB = 250mA
IB = 200mA
IB = 150mA
3
IB = 100mA
2
1
0
IB = 50mA
IB = 0
0
1
2
4
5
6
7
3
8
9
10
0.01
0.1
1
10
COLLECTOR-EMITTER VOLTAGE, V CE (V)
COLLECTOR CURRENT, I C (A)
UTC UNISONIC TECHNOLOGIES CO., LTD.
2
www.unisonic.com.tw
QW-R219-003,A
UTC 2SC5305
NPN EPITAXIAL SILICON TRANSISTOR
DC current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
100
10
1
10
VCE = 5V
IC = 10 IB
Ta = 125℃
25℃
-20℃
VBE(sat)
VCE(sat)
1
0.1
0.01
0.01
1
0.01
1
0.1
10
0.1
10
COLLECTOR CURRENT, I C (A)
COLLECTOR CURRENT, I C (A)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
100
1
10
IC = 5IB
IC = 5IB
25℃
1
-20℃
25℃
Ta = 125℃
Ta = 125℃
-20℃
0.1
0.01
0.1
0.01
0.01
0.1
1
10
0.1
1
10
COLLECTOR CURRENT, IC (A)
COLLECTOR CURRENT, IC (A)
Switching Time
VCC = 300V
Collector Output Capacitance
10
1
1000
100
f = 1MHz
IC = 5IB1 = -2.5IB2
tSTG
tF
0.1
0.01
10
1
0.1
1
1
COLLECTOR CURRENT, I C (A)
10
10
100
COLLECTOR-BASE VOLTAGE, V CB (V)
UTC UNISONIC TECHNOLOGIES CO., LTD.
3
www.unisonic.com.tw
QW-R219-003,A
UTC 2SC5305
NPN EPITAXIAL SILICON TRANSISTOR
Reverse Recovery Time
Forward Diode Voltage
1.6
1.4
1.2
1.0
0.8
10
1
0.1
1.0
0.01
0.1
1.5
2.0
1
10
FORWARD CURRENT, IF(A)
FORWARD DIODE CURRENT, I F (A)
Safe Operating Area
Power Derating
100
10
100
80
60
40
20
0
1μs
10μs
DC
1ms
1
5ms
0.1
0.01
10
100
0
25
50
75
1000
100 125 150 175
COLLECTOR-EMITTER VOLTAGE, V CE (V)
CASE TEMPERATURE, T C (℃)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UTC UNISONIC TECHNOLOGIES CO., LTD.
4
www.unisonic.com.tw
QW-R219-003,A
相关型号：
©2020 ICPDF网 联系我们和版权申明