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2SB649C(TO-126)

更新时间：2024-09-18 14:14:32

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描述：Transistor

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规格参数
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2SB649C(TO-126) 概述

Transistor 其他晶体管

2SB649C(TO-126) 规格参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.61	最大集电极电流 (IC)：	1.5 A
配置：	Single	最小直流电流增益 (hFE)：	100
最高工作温度：	150 °C	极性/信道类型：	PNP
最大功率耗散 (Abs)：	20 W	子类别：	Other Transistors
表面贴装：	NO	Base Number Matches：	1

2SB649C(TO-126) 数据手册

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UTC 2SB649 /A

PNP EPITAXIAL SILICON TRANSISTOR

BIPOLAR POWER GENERAL

PURPOSE TRANSISTOR

APPLICATIONS

* Low frequency power amplifier complementary pair with

UTC 2SB669/A

TO-126

1:EMITTER 2:COLLECTOR 3:BASE

ABSOLUTE MAXIMUM RATINGS _{(Ta=25°C, unless otherwise specified )}

PARAMETER

Collector-base voltage

SYMBOL

VCBO

RATING

-180

UNIT

Collector-emitter voltage

VCEO

2SB649

2SB649A

-120

-160

Emitter-base voltage

Collector current

Collector peak current

Collector power dissipation

Collector power dissipation (T_C=25°C)

Junction Temperature

Storage Temperature

VEBO

lc_(peak)

-5

-1.5

-3

°C

150

-55 ~ +150

TSTG

ELECTRICAL CHARACTERISTICS _{(Ta=25°C, unless otherwise specified)}

PARAMETER

SYMBOL

V_(BR)CBO

V_(BR)CEO

TEST CONDITIONS

I_C=-1mA, I_E=0

MIN TYP MAX UNIT

Collector to bse breakdown voltage

Collector to emitter breakdown

-180

I_C=-10mA, R_BE=∞

voltage

2SB649

-120

-160

-5

2SB649A

Emitter to base breakdown voltage

Collector cut-off current

V_{(BR) EBO}

ICBO

I_E=-1mA, I_C=0

µA

VCB=-160V, IE=0

-10

hFE1

VCE=-5V, Ic=-150mA (note)

VCE=-5V, Ic=-500mA (note)

VCE=-5V, Ic=-150mA (note)

VCE=-5V, Ic=-500mA (note)

320

2SB649

DC current gain

hFE2

hFE1

hFE2

200

2SB649A

UTC

UNISONIC TECHNOLOGIES CO. LTD

QW-R204-006,A

UTC 2SB649 /A

PNP EPITAXIAL SILICON TRANSISTOR

PARAMETER

Collector-emitter saturation voltage

Base-emitter voltage

SYMBOL

VCE(sat)

VBE

TEST CONDITIONS

Ic=-600mA, IB=-50mA

VCE=-5V, Ic=-150mA

VCE=-5V,Ic=-150mA

VCB=-10V, IE=0, f=1MHz

MIN TYP MAX UNIT

-1

-1.5

Current gain bandwidth product

Output capacitance

Cob

140

MHz

Note: Pulse test.

CLASSIFICATION OF h_FE1

RANK

RANGE

60-120

100-200

160-320

TYPICAL PARAMETERS PERFORMANCE

UTC

UNISONIC TECHNOLOGIES CO. LTD

QW-R204-006,A

UTC 2SB649 /A

PNP EPITAXIAL SILICON TRANSISTOR

UTC

UNISONIC TECHNOLOGIES CO. LTD

QW-R204-006,A

UTC 2SB649 /A

PNP EPITAXIAL SILICON TRANSISTOR

UTC

UNISONIC TECHNOLOGIES CO. LTD

QW-R204-006,A

UTC 2SB649 /A

PNP EPITAXIAL SILICON TRANSISTOR

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UTC

UNISONIC TECHNOLOGIES CO. LTD

QW-R204-006,A

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