1N65A [UTC]
0.5A, 650V N-CHANNEL POWER MOSFET; 0.5A ， 650V N沟道功率MOSFET
| 型号： | 1N65A |
| 厂家： | 
Unisonic Technologies |
| 描述： | 0.5A, 650V N-CHANNEL POWER MOSFET |
| 文件： | 总8页 (文件大小：197K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
1N65A
Power MOSFET
0.5A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 1N65A is a high voltage power MOSFET designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and high rugged avalanche
characteristics. This power MOSFET is usually used in high speed
switching applications at power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) =15.5Ω@VGS = 10V.
* Ultra Low gate charge (typical 8.0nC)
* Low reverse transfer capacitance (CRSS = 3.0 pF(max))
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
3
S
S
S
1N65AL-T92-B
1N65AL-T92-K
1N65AL-T92-R
1N65AG-T92-B
1N65AG-T92-K
1N65AG-T92-R
TO-92
TO-92
TO-92
Tape Box
Bulk
G
G
G
D
D
D
Tape Reel
Note: Pin Assignment: G: Gate D: Drain S: Source
1N65AL-T92-B
(1)Packing Type
(1) B: Tape Box, K: Bulk, R: Tape Reel
(2) T92: TO-92
(2)Package Type
(3)Lead Free
(3) G: Halogen Free, L: Lead Free
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1N65A
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified.)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
UNIT
V
Drain-Source Voltage
650
±30
0.5
2
Gate-Source Voltage
V
Continuous Drain Current
Pulsed Drain Current (Note 2)
A
IDM
A
Single Pulse(Note 3)
Repetitive(Note 2)
EAS
50
mJ
Avalanche Energy
EAR
3.6
4.0
mJ
V/ns
W
Peak Diode Recovery dv/dt (Note 4)
Power Dissipation (TC=25°C)
Derate above 25°C
dv/dt
4.5
3
PD
25
mW/°C
°C
Junction Temperature
TJ
+150
Operating Temperature
Storage Temperature
TOPR
TSTG
-55 ~ +150
-55 ~ +150
°C
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=92mH, IAS=0.8A, VDD=50V, RG=0Ω, Starting TJ=25°C
4. ISD≤1.0A, di/dt≤100A/μs, VDD≤BVDSS, Starting TJ=25°C
THERMAL DATA
PARAMETER
Junction to Ambient
SYMBOL
RATINGS
120
UNIT
°C/W
θJA
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1N65A
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
VGS = 0V, ID = 250μA
VDS = 650V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
650
V
10
μA
Forward
Reverse
100 nA
-100 nA
V/°C
Gate-Source Leakage Current
IGSS
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID =250mA,referenced to 25°C
0.4
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250μA
2.0
4.5
11.5 15.5
V
VGS = 10V, ID = 0.5A
Ω
CISS
COSS
CRSS
100 pF
VDS=25V, VGS=0V,
f=1MHz
Output Capacitance
20
3
pF
pF
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD (ON)
tR
tD (OFF)
tF
12
11
40
18
8
34
32
90
46
10
ns
ns
Turn-On Rise Time
VDD=325V, ID=0.5A,
RG=5Ω (Note 1,2)
Turn-Off Delay Time
ns
Turn-Off Fall Time
ns
Total Gate Charge
QG
nC
nC
nC
VDS=520V, VGS=10V,
ID=0.8A (Note 1,2)
Gate-Source Charge
QGS
QGD
1.8
4.0
Gate-Drain Charge
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
VSD
VGS=0V, ISD = 1.2A
1.6
1.2
V
A
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
4.8
A
Reverse Recovery Time
trr
VGS=0V, ISD = 1.2A
di/dt = 100A/μs
136
0.3
ns
Reverse Recovery Charge
QRR
μC
Notes: 1. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
2. Essentially independent of operating temperature.
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1N65A
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
VGS
(Driver)
Period
D=
P.W.
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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1N65A
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
RL
VDS
VDS
90%
VDD
VGS
RG
10%
VGS
D.U.T.
10V
tD(ON)
tD(OFF)
Pulse Width≤ 1μs
Duty Factor≤0.1%
tF
tR
Switching Test Circuit
Switching Waveforms
QG
Same Type
as D.U.T.
10V
50kΩ
12V
0.3μF
0.2μF
QGS
QGD
VDS
VGS
DUT
VGS
1mA
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
Time
tp
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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Power MOSFET
TYPICAL CHARACTERISTICS
Transfer Characteristics
Output Characteristics
VGS
Top: 15.0V
VDS=50V
250μs Pulse Test
10.0V
8.0V
100
7.0V
4.5V
6.0V
5.5V
5V
100
Bottorm:4.5V
10-1
250μs Pulse Test
TC=25°C
10-1
101
100
2
4
6
8
10
1.6
10
Drain-Source Voltage, VDS (V)
Gate-Source Voltage, VGS (V)
On-Resistance vs. Drain Current
TJ=25°C
Source- Drain Diode Forward Voltage
30
25
20
VGS=0V
250μs Pulse Test
VGS=10V
VGS=20V
100
15
10
5
10-1
0
1.5
Drain Current, ID (A)
0.2 0.4
0.6
0.8
1.0
1.2
1.4
0.0
1.0
2.0
2.5
0.5
Source-Drain Voltage, VSD (V)
Capacitance vs. Drain-Source Voltage
Gate Charge vs. Gate-Source Voltage
VDS=520V
200
150
12
10
CISS=CGS+CGD
(CDS=shorted)
COSS=CDS+CGD
CRSS=CGD
CISS
VDS=300V
VDS=120V
8
6
4
COSS
100
50
0
CRSS
2
0
VGS=0V
f = 1MHz
ID=1.0A
10-1
100
101
6
2
0
4
8
Drain-SourceVoltage, VDS (V)
Total Gate Charge, QG (nC)
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1N65A
Power MOSFET
TYPICAL CHARACTERISTICS (Cont.)
Breakdown Voltage vs. Temperature
On-Resistance vs. Temperature
VGS=10V
3.0
2.5
2.0
1.5
1.0
1.2
1.1
VGS=0V
ID=250μA
ID=0.5A
1.0
0.9
0.8
0.5
0.0
200
-100 -50
0
50
100 150
200
-100 -50
0
50
100 150
Junction Temperature, TJ (°C)
Junction Temperature, TJ (°C)
Max. Safe Operating Area
Max. Drain Current vs. Case Temperature
1.0
0.5
Operation in This
Area is Limited by
RDS(on)
101
100
100μs
1ms
10ms
10-1
10-2
Tc=25°C
TJ=150°C
Single Pulse
0.0
100
101
103
25
50
Case Temperature, TC (°C)
75
100
125
102
150
Drain-Source Voltage, VDS (V)
Thermal Response
0.5
100
θ
JC (t) = 3.45°C/W Max.
0.2
0.1
Duty Factor, D=t1/t2
TJM-TC=PDM×θJC (t)
10-1
Single pulse
10-5
100
Square Wave Pulse Duration, t1 (sec)
101
10-4
10-3
10-2
10-1
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1N65A
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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