UM4953 [UNITPOWER]
Dual P-Ch 30V Fast Switching MOSFETs; 双P沟道30V的快速开关MOSFET
| 型号： | UM4953 |
| 厂家： | 
ShenZhen XinDeYi Electronics Co., Ltd. |
| 描述： | Dual P-Ch 30V Fast Switching MOSFETs |
| 文件： | 总4页 (文件大小：1167K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UM4953
Dual P-Ch 30V Fast Switching MOSFETs
General Description
Product Summery
The UM4953 is the highest performance trench
P-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
BVDSS
RDS(ON)
ID
-30V
80mΩ
-4.9A
Applications
The UM4953 meet the RoHS and Green Product
requirement , 100% EAS guaranteed with full
function reliability approved.
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
Features
Dual SOP8 Pin Configuration
z Advanced high cell density Trench technology
z Super Low Gate Charge
S 2
S 1
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
S1
G1
S2
1
2
3
4
8
7
6
5
D1
D1
D2
D2
z Green Device Available
G 2
G 1
G2
D 2 D 2
D 1 D 1
SO − 8
Absolute Maximum Ratings
Symbol
VDSS
VGSS
ID*
Parameter
Rating
-30
Unit
Drain-Source Voltage
Gate-Source Voltage
V
A
±25
-4.9
TA = 25°C
Maximum Drain Current Continuous
Maximum Drain Current Pulsed
IDM
-30
PD
2.5
TA = 25°C
Maximum Power Dissipation
W
1.0
TA = 100°C
TJ
Maximum Junction Temperature
Storage Temperature Range
150
°C
TSTG
-55 to 150
Thermal Data
*
Thermal Resistance - Junction to Ambient
50
°C/W
RθJA
1
UM4953
Dual P-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
UM4953
Typa. Max.
Symbol
Parameter
Test Condition
Unit
Min.
Static
Drain-Source Breakdown
Voltage
BVDSS
-30
V
VGS=0V , IDS=-250µA
Zero Gate Voltage Drain
Current
VGS(th) Gate Threshold Voltage
IDSS
VDS=-24V , VGS=0V
-1
µA
V
VDS=VGS , IDS=-250µA
VGS=±25V , VDS=0V
VGS=-10V , IDS=-4.9A
-1
-1.5
53
-2
IGSS
Gate Leakage Current
Drain-Source On-state
Resistanceb
nA
±100
60
RDS(ON)
mΩ
VGS=-4.5V , IDS=-3.6A
ISD=-1.7A , VGS=0V
80
95
VSD
Dynamica
Qg
Diode Forward Voltageb
V
-0.7
-1.3
Total Gate Charge
VDS=-15V , IGS=-10V
22.3
4.65
2
29
Qgs
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
nC
ns
lD=-4.6A
Qgd
td(ON)
Tr
td(OFF)
Tf
10
18
20
38
25
VDD=-15V , ID=-2A ,
VGEN=-10V , RG=6Ω
RL=7.5Ω
15
22
15
Ciss
Input Capacitance
VGS=0V
1260
340
220
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
pF
VDS=-25V
Frequency=1.0MHz
Notes
a : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
b : Guaranteed by design, not subject to production testing
2
UM4953
Dual P-Ch 30V Fast Switching MOSFETs
Typical Characteristics
30
30
-V = 5,6,7,8,9,10V
GS
25
20
15
10
5
25
20
15
10
5
-V =4V
GS
TJ=125°C
TJ=-55°C
-V =3V
GS
TJ=25°C
-V =2V
GS
0
0
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
-VGS - Gate-to-Source Voltage (V)
-VDS - Drain-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
On-Resistance vs. Drain Current
1.50
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
-IDS=250µA
1.25
1.00
0.75
0.50
0.25
0.00
V
=-4.5V
=-10V
GS
V
GS
-50 -25
0
25 50 75 100 125 150
0
3
6
9
12
15
Tj - Junction Temperature (°C)
-ID - Drain Current (A)
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
2.00
0.250
-VGS=10V
-ID=4.9A
-I = 4.9A
D
0.225
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
0.200
0.175
0.150
0.125
0.100
0.075
0.050
0.025
1
2
3
4
5
6
7
8
9
10
-50 -25
0
25 50 75 100 125 150
-VGS - Gate-to-Source Voltage (V)
TJ - Junction Temperature (°C)
3
UM4953
Dual P-Ch 30V Fast Switching MOSFETs
Capacitance
Typical Characteristics
Gate Charge
10
2800
Frequency=1MHz
-VD=10V
-ID=4.9A
2400
2000
8
6
1600
Ciss
1200
4
800
Coss
2
400
Crss
0
0
0
5
10
15
20
25
30
0
5
10
15
20
25
QG - Gate Charge (nC)
Source-Drain Diode Forward Voltage
-VDS - Drain-to-Source Voltage (V)
Single Pulse Power
50
40
30
20
10
0
30
10
T =150°C
T =25°C
J
J
1
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
0.01
0.1
1
10
100
-VSD-Source-to-Drain Voltage (V )
Time (sec)
Normalized Thermal Transient Impedence, Junction to Ambient
2
1
Duty Cycle = 0.5
D= 0.2
D= 0.1
D= 0.05
0.1
D= 0.02
1.Duty Cycle, D=t1/t2
2.Per Unit Base=RthJA=50°C/W
3.TJM-TA=PDMZthJA
SINGLEPULSE
4.Surface Mounted
0.01
1E-4
1E-3
0.01
0.1
1
10
100
Square Wave Pulse Duration (sec)
4
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