DBES105A99F [UMS]
Flip-Chip Dual Diode; 倒装芯片双二极管
| 型号： | DBES105A99F |
| 厂家： | 
UNITED MONOLITHIC SEMICONDUCTORS |
| 描述： | Flip-Chip Dual Diode |
| 文件： | 总4页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DBES105a
RoHS COMPLIANT
Flip-Chip Dual Diode
GaAs Diode
Description
30
30
100
diameter 20
The DBES105a is a dual Schottky diode based
on a low cost 1µm stepper process including a
bump technology. The parasitic inductances are
reduced and result in a very high operating
frequency.
This flip-chip dual diode has been designed for
high performance mixer applications.
160
230
Main Features
■ High cut-off frequencies: 3THz
■ High breakdown voltage: < -5V@ 20µA
■ Good ideality factor: 1.2
■ Low parasitic inductances
■ Low cost technology
■ Dimensions : 0.53 x 0.23 x 0.1mm
Main Characteristics
Tamb. = 25°C
Symbol
Wu
Parameter
Typ
5
Unit
µm
Gate Width
Fco
Cut-off frequency
Ideality factor
3
THz
n
1.2
< -5
BVak
Anode-cathode break-down voltage
V
ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!
Ref. : DSDBES105a6354 - 20 Dec 06
1/4
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
Flip-Chip Dual Diode
DBES105a
Rp
Rs
Equivalent Circuit
Cj0
Cpar
Cjo(fF) (0V)
9.5
Cpar(fF)
Fco(THz)
Rs(Ω)
4.4
5.8
2.4
Fco = 1/(2π Rs [Cpar + Cjo])
Rp can be neglected
Absolute Maximum Ratings (1)
Tamb. = 25°C
Symbol
Vak
Parameter
Typ. values
Unit
V
Reverse anode-cathode voltage
Forward anode-cathode current
-5
Iak
10
mA
(1) Operation of this device above anyone of these parameters may cause permanent damage.
Imax vs Tamb
12
10
8
6
4
2
0
0
20
40
60
80
100
120
Tamb (°C)
Ref. : DSDBES105a6354 - 20 Dec 06
2/4
Specifications subject to change without notice
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
Flip-Chip Dual Diode
DBES105a
Typical DC Measurements
-4.0
1E-01
-3.0
-2.0
-1.0
Voltage UD [V]
UI-Characteristic
1E-02
1E-03
1E-04
1E-05
1E-06
1E-07
1E-08
1E-09
1E-10
1E-11
Is = 3.5e-14 A
1x5µm
0.00
0.25
0.50
0.75
1.00
Typical On-Wafer Measurements
Bias Conditions
Vak = 0V
Ref. : DSDBES105a6354 - 20 Dec 06
3/4
Specifications subject to change without notice
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
Flip-Chip Dual Diode
DBES105a
Mechanical data
30
30
100
diameter 20
160
230
Dimensions in µm
Dimensions: 230 ± 35 x 530 ± 35 µm
Thickness= 100µm ± 10 µm
Ordering Information
Chip form
:
DBES105a99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
Ref. : DSDBES105a6354 - 20 Dec 06
4/4
Specifications subject to change without notice
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
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