XP151A11B0MR-G [TYSEMI]

Ultra High-Speed Switching Gate Protect Diode Built-in Driving Voltage : 4.5V; 超高速开关门保护二极管内置驱动电压: 4.5V
XP151A11B0MR-G
型号: XP151A11B0MR-G
厂家: TY Semiconductor Co., Ltd    TY Semiconductor Co., Ltd
描述:

Ultra High-Speed Switching Gate Protect Diode Built-in Driving Voltage : 4.5V
超高速开关门保护二极管内置驱动电压: 4.5V

二极管 开关 栅 驱动
文件: 总2页 (文件大小:346K)
下载:  下载PDF数据表文档文件

XP151A12A2MR

Cellular and portable phones On-board power supplies Li-ion battery systems

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6 TYSEMI

XP151A12A2MR

Power MOSFET

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67 TOREX

XP151A12A2MR

Power MOS FET

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136 TOREX

XP151A12A2MR

Power MOS FET

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77 TOREX

XP151A12A2MR_1

Power MOSFET

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32 TOREX

XP151A12A2MR_12

Power MOSFET

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16 TOREX

XP151A12A2MR-12

Power MOSFET

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17 TOREX

XP151A12A2MR-G

Power MOSFET

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13 TOREX

XP151A12A2MR-G

Cellular and portable phones On-board power supplies Li-ion battery systems

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9 TYSEMI

XP151A13

N-Channel Power

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91 KEXIN

XP151A13A0MR

Power MOSFET

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130 TOREX

XP151A13A0MR

Power MOS FET

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387 TOREX

XP151A13A0MR

Power MOS FET

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165 TOREX

XP151A13A0MR

Cellular and portable phones On-board power supplies Ultra High-Speed Switching

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17 TYSEMI

XP151A13A0MR_1

Power MOSFET

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39 TOREX