MM3Z2V4S [TYSEMI]

Planar Die Construction; 平面模具结构
MM3Z2V4S
型号: MM3Z2V4S
厂家: TY Semiconductor Co., Ltd    TY Semiconductor Co., Ltd
描述:

Planar Die Construction
平面模具结构

文件: 总3页 (文件大小:466K)
中文:  中文翻译
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Product specification  
MM3Z2V4S  
SOD-323  
Unit: mm  
Features  
+0.1  
+0.05  
1.7-0.1  
0.85-0.05  
Planar Die Construction  
Ultra-Small Surface Mount Package  
Ideally Suited for Automated Assembly Processes  
+0.1  
2.6-0.1  
1.0max  
0.475  
0.375  
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Symbol  
PD  
Rating  
Unit  
mW  
V
Power Dissipation  
Forward Voltage  
(Note 1)  
200  
0.9  
@ IF = 10mA  
VF  
Thermal Resistance, Junction to Ambient Air (Note 1)  
Operating and Storage Temperature Range  
RθJA  
625  
/W  
Tj, TSTG  
-65 to +150  
Note: 1.Part mounted on FR-4 PC board with recommended pad layout.  
Electrical Characteristics @Ta=25unless otherwise specified  
Maximum Reverse  
Current  
Typical  
Zener Voltage Range  
(Note 2)  
Maximum ZenerImpedance  
Temperature  
Coefficient  
@ IZT  
(Note 3)  
(Note 2)  
Type Number  
MM3Z2V4S  
mV/℃  
Vz @ IZT  
IR @ VR  
IZT  
ZZT @ IZT ZZK @ IZK  
IZK  
Ω
Min (V) Nom (V) Max (V)  
mA  
5
mA  
0.5  
μA  
V
Min  
-3.5  
Max  
0
2.2  
2.4  
2.6  
100  
1000  
50  
1.0  
Notes: 2. Short duration test pulse used to minimize self-heating effect.  
3. f = 1kHz.  
Marking  
Marking  
1C  
http://www.twtysemi.com  
sales@twtysemi.com  
4008-318-123  
1 of 3  
Product specification  
MM3Z2V4S  
Typical Characteristics  
1000  
1000  
100  
T
= 25 C  
J
I
= 0.1 I  
Z(DC )  
Z(AC )  
f = 1 kHz  
100  
I
= 1 mA  
Z
5 mA  
150 C  
10  
10  
75 C 25 C  
0.5 0.6  
0 C  
0.8  
1.0  
1.0  
3.0  
10  
0.4  
0.7  
0.9  
1.0  
1.1  
1.2  
80  
V , NOMINAL ZE NE R VOLTAG E  
Z
V , FOR WAR D VOLTAG E (V)  
F
Fig.1 Effect of Zener Voltage on  
Zener Impedance  
Fig.2 Typical Forward Voltage  
1000  
100  
1000  
100  
10  
T
= 25 C  
A
0 V BIAS  
BIAS AT  
1 V BIAS  
1.0  
+150 C  
0.1  
0.01  
50% OF V NOM  
10  
Z
+25 C  
-5 5 C  
0.001  
0.0001  
1.0  
0.00001  
4.0  
10  
70  
0
10  
20  
30  
40  
50  
60  
70  
V , NOMINAL ZE NE R VOLTAG E (V)  
Z
V , NOMINAL ZE NE R VOLTAG E (V)  
Z
Fig.4 Typical Leakage Current  
Fig.3 Typical Capacitance  
D
http://www.twtysemi.com  
sales@twtysemi.com  
2 of 3  
4008-318-123  
Product specification  
MM3Z2V4S  
100  
10  
1
100  
10  
T
= 25 C  
T
= 25 C  
A
A
1.0  
0.1  
0.1  
0.01  
0.01  
10  
30  
50  
70  
90  
0
2.0  
4.0  
6.0  
8.0  
10  
12  
V , ZE NE R VOLTAG E (V)  
Z
V , ZE NE R VOLTAG E (V)  
Z
Fig.6 Zener Voltage versus Zener Current  
(12 V to 75 V)  
Fig.5 Zener Voltage versus Zener Current  
(Vz Up to 12 V)  
O
Ambient Temperature: Ta ( C)  
Derating Curve  
Fig.7 Power Dissipation VS Ambient Temperature  
http://www.twtysemi.com  
sales@twtysemi.com  
3 of 3  
4008-318-123  

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