KX020N06 [TYSEMI]
VDS (V) = 60V ID = 2 A (VGS = 10V) RDS(ON) 200m (VGS = 10V); VDS （V ） = 60V， ID = 2 A（ VGS = 10V ） RDS （ ON ） 200米（ VGS = 10V ）
| 型号： | KX020N06 |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | VDS (V) = 60V ID = 2 A (VGS = 10V) RDS(ON) 200m (VGS = 10V) |
| 文件： | 总2页 (文件大小：470K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
e
M O S FIECT
MOSFIECT
SMD Type
Product specification
KX020N06
U
n
i
t
:
m
m
S
O
T
-
8
9
1
.
5
0
±
0
.
1
4
.
5
0
±
0
.
1
■ Features
1
.
8
0
±
0
.
1
●
●
●
●
●
VDS (V) = 60V
ID = 2 A (VGS = 10V)
＜
＜
＜
Ω
200m (V = 10V)
DS(ON)
DS(ON)
GS
R
R
3
1
2
0
.
4
4
±
0
.
1
Ω
GS
280m (V = 4.5V)
0
.
4
8
±
0
.
1
0
.
5
3
±
0
.
1
Ω
340m (VGS = 4V)
RDS(ON)
3
.
0
0
±
0
.
1
1 Gate
2 Drain
DRAIN
3 Source
GATE
∗2
∗1
SOURCE
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Symbol
VDS
Rating
60
Unit
V
Gate-Source Voltage
VGS
±20
D
Continuous Drain Current
Pulsed Drain Current
I
±2
±8
A
DM
I
500
2
D
P
Power Dissipation
W
thJA
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Case
Junction and Storage Temperature Range
R
250
62.5
℃
/W
Rthc
J
STG
℃
T , T
-55 to 150
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
1 of 2
e
M O S FIECT
M O S FIECT
MOSFIECT
SMD Type
Product specification
KX020N06
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Symbol
VDSS
Testconditons
ID=1mA, VGS=0V
Min
60
Typ
Max
1
Unit
V
μ
IDSS
VDS=60V, VGS=0V
A
±
GS
±
μ
GSS
I
DS
V
=0V, V
=
20V
10
A
VGS(th)
VDS=10V ID=1mA
VGS=10V, ID=2A
1.0
2.5
200
280
340
V
150
DS(O )
n
Ω
m
Static Drain-Source On-Resistance
R
GS
D
V
V
=4.5V, I =2A
200
240
140
50
40
7.0
1
GS
D
=4V, I =2A
Input Capacitance
Ciss
oss
rss
VGS=0V, VDS=10V, f=1MHz
VGS=10V, VDS=30V, ID=2A
pF
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
C
Qg
14
gs
gd
nC
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Q
Q
2
td(on)
7.0
10
22
18
r
t
Ω
Ω
VGS=10V, VDS=30V, RL=30 ,RGEN=10
ns
V
d(off)
t
, I D=1A
tf
SD
V
S
GS
Diode Forward Voltage
I =2A,V =0V
1.2
http://www.twtysemi.com
2 of 2
sales@twtysemi.com
4008-318-123
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