FZT790A [TYSEMI]

Low equivalent on-resistance; RCE(sat) 125mÙ at 2A, Gain of 200 at IC=1 Amps and Very low saturation voltage; 低等效导通电阻; RCE (SAT) 125mA的?在2A , 200在IC = 1安培增益和极低的饱和电压
FZT790A
型号: FZT790A
厂家: TY Semiconductor Co., Ltd    TY Semiconductor Co., Ltd
描述:

Low equivalent on-resistance; RCE(sat) 125mÙ at 2A, Gain of 200 at IC=1 Amps and Very low saturation voltage
低等效导通电阻; RCE (SAT) 125mA的?在2A , 200在IC = 1安培增益和极低的饱和电压

晶体 晶体管 开关 光电二极管
文件: 总2页 (文件大小:90K)
中文:  中文翻译
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Product specification  
FZT790A  
SOT-223  
Unit: mm  
+0.2  
3.50  
-0.2  
+0.2  
6.50  
-0.2  
Features  
Low equivalent on-resistance; RCE(sat) 125mÙ at 2A.  
Gain of 200 at IC=1 Amps and Very low saturation voltage.  
+0.2  
0.90  
-0.2  
+0.1  
3.00  
-0.1  
+0.3  
7.00  
-0.3  
4
1 base  
1
2
3
+0.1  
0.70  
-0.1  
2.9  
2 collector  
3 emitter  
4.6  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Symbol  
Rating  
-50  
-40  
-5  
Unit  
V
VCBO  
VCEO  
VEBO  
ICM  
Collector-emitter voltage  
Emitter-base voltage  
V
V
Continuous collector current  
-6  
A
Peak pulse current  
IC  
-3  
2
A
Power dissipation  
Ptot  
W
Operating and storage temperature range  
Tj,Tstg  
-55 to +150  
http://www.twtysemi.com  
1 of 2  
sales@twtysemi.com  
4008-318-123  
Product specification  
FZT790A  
Electrical Characteristics Ta = 25  
Parameter  
Breakdown Voltages  
Breakdown Voltages  
Breakdown Voltages  
Symbol  
Testconditons  
Min  
-50  
-40  
-5  
Typ  
-70  
-60  
-8.5  
Max  
Unit  
V
V(BR)CBO IC=-100ìA  
V(BR)CEO IC=-10mA  
V(BR)EBO IE=-100ìA  
V
V
VCB=-30V  
ICBO  
-0.1  
-10  
Collector Cut-Off Current  
Emitter Cut-Off Current  
ìA  
ìA  
VCB=-30V,Ta = 100  
IEBO  
VEB=-4V  
-0.1  
IC=-500mA, IB=-5mA  
-0.15 -0.25  
-0.30 -0.45  
-0.40 -0.75  
Collector-Emitter Saturation Voltage *  
VCE(sat) IC=-1A, IB=-10mA  
IC=-2A, IB=-50mA  
V
Base-Emitter Saturation Voltage *  
Base-EmitterTurn-OnVoltage *  
VBE(sat) IC=-1A, IB=-10mA  
VBE(on) IC=-1A, VCE=-2V  
IC=-10mA, VCE=-2V  
-0.8  
-1.0  
V
V
-0.75  
300  
250  
200  
150  
100  
800  
IC=-500mA, VCE=-2V*  
hFE  
IC=-1A, VCE=-2V*  
Static Forward Current Transfer Ratio  
IC=-2A, VCE=-2V*  
Transitional frequency  
Output capacitance  
Turn-on time  
fT  
IC=-50mA, VCE=-5V, f=50MHz  
MHz  
pF  
Cobo  
t(on)  
t(off)  
VCB=-10V, f=1MHz  
IC=-500mA, VCC=-10V  
IB1=IB2=-50mA  
24  
35  
ns  
Turn-off time  
600  
ns  
* Pulse test: tp = 300 ìs; d  
0.02.  
Marking  
Marking  
FZT790A  
http://www.twtysemi.com  
2 of 2  
sales@twtysemi.com  
4008-318-123  

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