FDB2552 [TYSEMI]

rDS(ON) = 32m (Typ.), VGS = 10V, ID = 16A UIS Capability (Single Pulse and Repetitive Pulse); RDS（ON） = 32米（典型值）， VGS = 10V ， ID = 16A UIS能力（单脉冲，重复脉冲）

FDB2552


型号：	FDB2552
厂家：	TY Semiconductor Co., Ltd
描述：	rDS(ON) = 32m (Typ.), VGS = 10V, ID = 16A UIS Capability (Single Pulse and Repetitive Pulse) RDS（ON） = 32米（典型值）， VGS = 10V ， ID = 16A UIS能力（单脉冲，重复脉冲）晶体晶体管开关脉冲 PC
文件：	总2页 (文件大小：129K)
中文：	中文翻译
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SMD Type

Product specification

KDB2552^(FDB2552)

Features

TO-263

Unit: mm

r^DS(ON)= 32m (Typ.), V^GS= 10V, I^D= 16A

Q^g(tot)= 39nC (Typ.), V^GS= 10V

Low Miller Charge

+0.2

4.57

-0.2

+0.1

1.27

-0.1

Low Q^RRBody Diode

UIS Capability (Single Pulse and Repetitive Pulse)

+0.1

-0.1

0.1max

1.27

+0.1

0.81

-0.1

2.54

1 Gate

+0.2

2.54

-0.2

2 Drain

3 Source

+0.1

5.08

-0.1

+0.2

0.4

-0.2

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Gate to source voltage

Drain current-Continuous T^C=25

T^A=25

Symbol

V^DSS

Rating

Unit

V

150

V^GSS

V

20

37

A

I^D

5

150

A

Power dissipation

W

W/

/W

P^D

1.0

Derate above 25

Thermal Resistance Junction to Ambient

Channel temperature

Storage temperature

R^èJA

T^ch

43

175

T^stg

-55 to +175

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SMD Type

Product specification

KDB2552^(FDB2552)

Electrical Characteristics Ta = 25

Parameter

Symbol

V^DSS

Testconditons

I^D=250ìA V^GS=0V

Min

150

Typ

Max

Unit

V

Drain to source breakdown voltage

V^DS=120V,V^GS=0

V^DS=120V,V^GS=0,T^C=150

V^GS= 20V

1

Drain cut-off current

I^DSS

A

250

100

4.0

Gate leakage current

Gate threshold voltage

I^GSS

nA

V

V^GS(th)

V^DS= V^GS, I^D= 250ìA

V^GS=10V,I^D=16A

V^GS=6V,I^D=8A

2.0

0.032 0.036

0.036 0.054

0.084 0.097

2800

Drain to source on-state resistance

R^DS(on)

Ù

V^GS=10V,I^D=16A,T^C=175

Input capacitance

C^iss

C^oss

C^rss

Q^g(TOT)

Q^g(TH)

Q^gs

pF

pF

pF

nC

nC

nC

nC

nC

ns

ns

ns

ns

ns

ns

ns

nC

V

Output capacitance

V^DS=25V,V^GS=0,f=1MHZ

285

Reverse transfer capacitance

Total Gate Charge at 10V

Threshold Gate Charge

Gate to Source Gate Charge

Gate Charge Threshold to Plateau

Gate to Drain "Miller" Charge

Turn-On Time

55

V^GS= 0V to 10V

V^GS= 0V to 2V

V^DS= 75V,

I^g=1.0mA

39

5.2

13.5

8.4

8.3

51

6.8

Q^gs2

Q^gd

I^D= 16A

t^ON

62

Turn-On Delay Time

Rise Time

t^d(ON)

t^r

t^d(OFF)

t^f

t^OFF

t^rr

12

29

36

29

VDD = 75V, ID = 16A

V^GS= 10V, R^GS= 8.2

Turn-Off Delay Time

Fall Time

Turn-Off Time

97

90

Reverse Recovery Time

Reverse Recovered Charge

I^SD= 16A, d^iSD/d^t= 100A/ìs

I^SD= 16A, d^iSD/d^t= 100A/ìs

I^SD= 16A

Q^RR

242

1.25

1.0

Source to Drain Diode Voltage

V^SD

ISD = 8A

V

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