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BCP68-25 [TYSEMI]

High current. Three current gain selections. 1.4 W total power dissipation.; 大电流。三个电流增益选择。 1.4 W的总功耗。
BCP68-25
型号： BCP68-25
厂家： TY Semiconductor Co., Ltd    TY Semiconductor Co., Ltd
描述：

High current. Three current gain selections. 1.4 W total power dissipation.
大电流。三个电流增益选择。 1.4 W的总功耗。

晶体 晶体管 光电二极管 放大器
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中文：  中文翻译
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TransistIoCrs  
                                                  
                                                  
Product specification  
BCP68  
SOT-223  
Unit: mm  
+0.2  
3.50  
-0.2  
+0.2  
6.50  
-0.2  
Features  
High current.  
+0.2  
0.90  
-0.2  
Three current gain selections.  
1.4 W total power dissipation.  
+0.1  
3.00  
-0.1  
+0.3  
7.00  
-0.3  
4
1 base  
1
2
3
+0.1  
0.70  
-0.1  
2.9  
2 collector  
3 emitter  
4.6  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
32  
20  
5
V
V
Collector current (DC)  
Peak collector current  
Peak base current  
1
A
ICM  
2
A
IBM  
200  
mA  
Total power dissipation  
* 1  
* 2  
* 3  
0.625  
1
W
W
W
Ptot  
1.4  
Storage temperature  
Tstg  
Tj  
-65 to +150  
150  
Junction temperature  
Operating ambient temperature  
Thermal resistance from junction to ambient *  
Tamb 25  
Tamb  
-65 to +150  
200  
125  
89  
K/W  
K/W  
K/W  
K/W  
* 1  
Rth(j-a)  
* 2  
* 3  
Thermal resistance from junction to solder point  
Rth(j-s)  
15  
*1 Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.  
*2 Device mounted on a FR4 PCB; single-sided copper; tinplated; 1 cm2 collector mounting pad.  
*3 Device mounted on a FR4 PCB; single-sided copper; tinplated; 6 cm2 collector,mounting pad.  
4008-318-123  
http://www.twtysemi.com  
1 of 2  
sales@twtysemi.com  
TransistIoCrs  
                                                  
                                                  
Product specification  
BCP68  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
ICBO  
Testconditons  
IE = 0 A; VCB = 25 V  
Min  
Typ  
Max  
100  
10  
Unit  
nA  
Collector cutoff current  
Emitter cutoff current  
ìA  
nA  
IE = 0 A; VCB = 25 V; Tj = 150  
IC = 0 A; VEB = 5 V  
IEBO  
100  
DC current gain  
BCP68  
VCE = 10 V; IC = 5 mA  
50  
85  
VCE = 1 V; IC = 500 mA  
VCE = 1 V; IC = 1 A  
375  
hFE  
60  
DC current gain  
BCP68-25  
VCE = 1 V; IC = 500 mA  
IC = 100 mA; IB = 1 A;  
160  
375  
500  
700  
1
VCEsat  
Collector-emitter saturation voltage  
mV  
mV  
V
VCE = 10 V; IC = 5 mA  
Base-emitter voltage  
VBE  
VCE = 1 V; IC = 1 A  
Collector capacitance  
Transition frequency  
Cc  
fT  
IE = ie = 0 A; VCB = 10 V; f = 1 MHz  
IC = 50 mA; VCE = 5 V; f = 100 MHz  
22  
pF  
40  
170  
MHz  
hFE Classification  
TYPE  
BCP68  
BCP68  
BCP68-25  
BCP68/25  
Marking  
4008-318-123  
http://www.twtysemi.com  
2 of 2  
sales@twtysemi.com  

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