BC856AW [TYSEMI]

Low current (max. 100 mA). Low voltage (max. 65 V).; 低电流(最大100 mA时) 。低电压(最大65V)时。
BC856AW
型号: BC856AW
厂家: TY Semiconductor Co., Ltd    TY Semiconductor Co., Ltd
描述:

Low current (max. 100 mA). Low voltage (max. 65 V).
低电流(最大100 mA时) 。低电压(最大65V)时。

晶体 晶体管 开关 光电二极管
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TransistIoCrs  
BC856W,BC857W,BC858W  
Features  
Low current (max. 100 mA).  
Low voltage (max. 65 V).  
1 Emitter  
2 Base  
3 Collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
BC856W BC857W BC858W  
Unit  
V
-80  
-65  
-50  
-45  
-30  
-30  
Collector-emitter voltage  
Emitter-base voltage  
V
-5  
V
-100  
Collector current  
mA  
mA  
mA  
mW  
-200  
Peak collector current  
ICM  
-200  
Peak base current  
IBM  
200  
Total power dissipation  
Junction temperature  
Ptot  
150  
Tj  
-65 to +150  
-65 to +150  
625  
Storage temperature  
Tstg  
Operating ambient temperature  
Thermal resistance from junction to ambient  
Ramb  
Rth j-a  
K/W  
4008-318-123  
http://www.twtysemi.com  
1 of 2  
sales@twtysemi.com  
TransistIoCrs  
BC856W,BC857W,BC858W  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
ICBO  
Testconditons  
VCB = -30 V; IE = 0  
Min  
Typ  
-1  
Max  
-15  
Unit  
nA  
Collector cutoff current  
ICBO  
-4  
ìA  
nA  
VCB = -30 V; IE = 0;Tj = 150  
VEB = -5 V; IC = 0  
Emitter cutoff current  
BC856W  
IEBO  
-100  
475  
800  
250  
475  
800  
-300  
125  
125  
125  
220  
420  
BC857W,BC858W  
DC current gain  
hFE  
IC = -2 mA; VCE = -5 V  
BC856AW,BC857AW  
BC856BW,BC857BW  
BC857CW  
IC = -10 mA; IB = -0.5 mA  
-75  
mV  
mV  
mV  
mV  
mV  
mV  
pF  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Base-emitter voltage  
VCE(sat)  
VBE(sat)  
VBE  
IC = -100 mA; IB = -5 mA;*  
IC = -10 mA; IB = -0.5 mA  
-250 -600  
-700  
IC = -100 mA; IB = -5 mA;*  
IC = -2 mA; VCE = -5 V  
-850  
-600 -650 -750  
IC = -10 mA; VCE = -5 V  
-820  
Collector capacitance  
Emitter capacitance  
Transition frequency  
CC  
Ce  
fT  
VCB = -10 V; IE = Ie = 0;f = 1 MHz  
VEB = -0.5 V; IC = Ic = 0;f = 1 MHz  
VCE = -5 V; IC = -10 mA;f = 100 MHz  
3
12  
pF  
100  
MHz  
IC = -200 ìA; VCE = -5 V;RS = 2 kÙ; f  
= 1 kHz;B = 200 Hz  
Noise figure  
NF  
10  
dB  
* Pulse test: tp  
300ìs, ä  
0.02.  
hFE Classification  
TYPE  
BC856W  
BC856AW  
BC856BW  
3B  
Marking  
3D  
3A  
TYPE  
BC857W  
3H  
BC857AW  
3E  
BC857BW  
3F  
BC857CW  
3G  
Marking  
TYPE  
BC858W  
3M  
Marking  
4008-318-123  
http://www.twtysemi.com  
2 of 2  
sales@twtysemi.com  

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