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BAV70T [TYSEMI]

Power dissipation (Ta mb=25 ) PD 150 mW Forward Current IF 75 mA; 功耗（钽MB = 25 ）， PD 150 mW的正向电流IF 75毫安
BAV70T
型号： BAV70T
厂家： TY Semiconductor Co., Ltd    TY Semiconductor Co., Ltd
描述：

Power dissipation (Ta mb=25 ) PD 150 mW Forward Current IF 75 mA
功耗（钽MB = 25 ）， PD 150 mW的正向电流IF 75毫安

二极管 光电二极管
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Product specification  
BAS16T;BAW56T  
BAV70T;BAV99T  
SOT-523  
+0.1  
1.6  
-0.1  
Unit: mm  
+0.1  
1.0  
-0.1  
+0.05  
0.2  
-0.05  
+0.01  
0.1  
-0.01  
Features  
2
1
3
+0.25  
0.3  
-0.05  
+0.1  
0.5  
-0.1  
1. Base  
2. Emitter  
3. Collecter  
Absolute Maximum Ratings Ta = 25  
Parameter  
Symbol  
PD  
Limits  
150  
Unit  
mW  
mA  
V
Power dissipation  
Forward Current  
Reverse Voltage  
(Ta mb=25  
)
IF  
75  
VR  
85  
Operating and storage junction temperature range  
TJ, Tstg  
-55 to +150  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
V(BR)  
Conditions  
IR = 100  
Min  
85  
Max  
Unit  
V
Reverse breakdown voltage  
A
VR =75 V  
VR =25 V  
IF =1 mA  
2
Reverse voltage leakage current  
IR  
A
0.03  
715  
855  
1000  
1250  
1.5  
IF =10 mA  
IF = 50 mA  
Forward voltage  
VF  
mV  
IF =150 mA  
Diode capacitance  
CD  
trr  
VR=0 V,f=1MHz  
pF  
ns  
Reverse recovery time  
4
Marking  
Type  
BAS16T  
A2  
BAW56T  
JD  
BAV70T  
JJ  
BAV99T  
JE  
Marking  
http://www.twtysemi.com  
1 of 1  
sales@twtysemi.com  
4008-318-123  

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