BAV199T [TYSEMI]
Ultra-Small Surface Mount Package Very Low Leakage Current; 超小型表面贴装封装超低漏电流
| 型号： | BAV199T |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | Ultra-Small Surface Mount Package Very Low Leakage Current |
| 文件： | 总2页 (文件大小：91K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product specification
BAV170T; BAV199T
SOT-523
+0.1
1.6
-0.1
Unit: mm
+0.1
1.0
-0.1
+0.05
0.2
-0.05
+0.01
0.1
-0.01
Features
2
1
Ultra-Small Surface Mount Package
Very Low Leakage Current
3
+0.25
0.3
-0.05
+0.1
0.5
-0.1
1. Base
2. Emitter
3. Collecter
Absolute Maximum Ratings Ta = 25
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Symbol
VRRM
VRWM
VR
Conditions
Value
85
Unit
V
85
V
85
V
RMS Reverse Voltage
VR(RMS)
60
V
Single Diode
Double Diode
215
125
500
4
Forward Continuous Current (Note 1)
Repetitive Peak Forward Current
IFM
mA
mA
IFRM
@ t = 1.0
s
Non-Repetitive Peak Forward Surge Current
IFSM
A
@ t = 1.0 ms
@ t = 1.0 s
1
0.5
150
833
Power Dissipation (Note 1)
PD
mW
/W
Thermal Resistance Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Note
RèJA
Tj , TSTG
-65 to + 150
1.Device mounted on FR-4 PC board with recommended pad layout
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4008-318-123
Product specification
BAV170T; BAV199T
Electrical Characteristics Ta = 25
Parameter
Symbol
V(BR)R
Conditions
IR = 100
Min
85
Typ
Max
Unit
V
Reverse Breakdown Voltage (Note 2)
A
IF = 1.0 mA
IF = 10 mA
0.90
1.0
1.1
1.25
5.0
80
Forward Voltage (Note 2)
VF
V
IF = 50 mA
IF = 150 mA
VR = 75 V
Leakage Current (Note 2)
Total Capacitance
Reverse Recovery Time
Note
IR
CT
trr
nA
pF
ìs
VR = 75 V; Tj = 150
f = 1 MHz; VR = 0 V
IF = IR = 10mA,
Irr = 0.1 x IR, RL = 100
2
3.0
2.Short duration test pulse used to minimize self-heating effect.
Marking
Type
BAV170T
51
BAV199T
52
Marking
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sales@twtysemi.com
4008-318-123
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