BAR50-03W [TYSEMI]

Current-controlled RF resistor for switching and attenuating applications; 电流控制的射频电阻器,用于切换和衰减的应用
BAR50-03W
型号: BAR50-03W
厂家: TY Semiconductor Co., Ltd    TY Semiconductor Co., Ltd
描述:

Current-controlled RF resistor for switching and attenuating applications
电流控制的射频电阻器,用于切换和衰减的应用

电阻器 射频
文件: 总2页 (文件大小:91K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Product specification  
BAR50-03W  
SOD-323  
Unit: mm  
+0.1  
-0.1  
+0.05  
0.85  
-0.05  
1.7  
Features  
Current-controlled RF resistor for switching and attenuating applications  
Frequency range above 10 MHz up to 6 GHz  
Especially useful as antenna switch in mobile communication  
Very low capacitance at zero volt reverse bias at freuencies above 1 GHz (typ. 0.15 pF)  
VLow forward resitance  
+0.1  
-0.1  
2.6  
1.0max  
0.475  
0.375  
Very low harmonics  
A bsolute M axim um R atings T a = 25  
P aram eter  
D iode reverse voltage  
S ym bol  
V R  
V alue  
50  
U nit  
V
F orw ard current  
IF  
100  
250  
150  
m A  
m W  
P tot  
T j  
T otal pow er dissipation  
Junction tem perature  
T S  
116  
O perating tem perature range  
S torage tem perature range  
Junction - soldering point1)  
T o p  
T stg  
R thJS  
-55 to +125  
-55 to +150  
135  
K /W  
http://www.twtysemi.com  
1 of 2  
sales@twtysemi.com  
4008-318-123  
Product specification  
BAR50-03W  
Electrical Characteristics Ta = 25  
Parameter  
Reverse current  
Symbol  
IR  
Conditions  
VR = 50 V  
Min  
Typ  
Max  
50  
Unit  
nA  
V
Forward voltage  
VF  
IF = 50 mA  
0.95  
0.24  
0.2  
0.2  
0.15  
25  
1.1  
0.5  
0.4  
VR = 1 V, f = 1 MHz  
VR = 5 V, f = 1 MHz  
Diode capacitance  
CT  
pF  
VR = 0 V, f = 100 MHz  
VR = 0 V, f = 1...1.8 GHz, all other  
VR = 0 V, f = 100 MHz  
VR = 0 V, f = 1 GHz  
Reverse parallel resistance  
Forward resistance  
Rp  
rf  
6
K
VR = 0 V, f = 1.8 GHz  
IF = 0.5 mA, f = 100 MHz  
IF = 1 mA, f = 100 MHz  
IF = 10 mA, f = 100 MHz  
IF = 10 mA, IR = 6 mA,measured at  
IR = 3 mA,RL = 100  
5
25  
40  
25  
16.5  
3
4.5  
Charge carrier life time  
I-region width  
1100  
ns  
rr  
WI  
56  
-0.56  
-0.4  
-0.27  
-24.5  
-20  
ìm  
IF = 3 mA, f = 1.8 GHz  
IF = 5 mA, f = 1.8 GHz  
IF = 18 mA, f = 1.8 GHz  
VR = 0 V, f = 0.9 GHz  
VR = 0 V, f = 1.8 GHz  
VR = 0 V, f = 2.45 GHz  
VR = 0 V, f = 5.6 GHz  
|S21|2  
Insertion loss  
dB  
dB  
|S21|2  
Isolation  
-18  
-12  
Marking  
Marking  
blue A  
http://www.twtysemi.com  
2 of 2  
sales@twtysemi.com  
4008-318-123  

相关型号:

BAR50-03W-E6433

Pin Diode, 50V V(BR),
INFINEON

BAR50-03WE6327

Pin Diode, 50V V(BR),
INFINEON

BAR50-05

Silicon PIN Diodes
INFINEON

BAR5000

50 AMP BUTTON DIODES
DEC

BAR5000S

50 AMP BUTTON DIODES
DEC

BAR5001

50 AMP BUTTON DIODES
DEC

BAR5001D

50 AMP JUMBO DIODE CELL
DEC

BAR5001S

50 AMP BUTTON DIODES
DEC

BAR5002

50 AMP BUTTON DIODES
DEC

BAR5002D

50 AMP JUMBO DIODE CELL
DEC

BAR5002S

50 AMP BUTTON DIODES
DEC
INFINEON