BAL99W [TYSEMI]
Very small plastic SMD envelope Continuous reverse voltage:max. 75 V; 非常小的塑料SMD信封连续反向电压:最大。 75 V型号: | BAL99W |
厂家: | TY Semiconductor Co., Ltd |
描述: | Very small plastic SMD envelope Continuous reverse voltage:max. 75 V |
文件: | 总2页 (文件大小:102K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Product specification
BAL99W
Features
Very small plastic SMD envelope
High switching speed: max. 4 ns
Continuous reverse voltage:max. 75 V
Repetitive peak reverse voltage:max. 85 V
Repetitive peak forward current:max. 500 mA.
Absolute Maximum Ratings Ta = 25
Parameter
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
Symbol
Conditions
Min
Max
85
Unit
V
VRRM
VR
75
V
IF
150
500
mA
mA
IFRM
square wave; Tj = 25 prior to surge;
4
t = 1
s
non-repetitive peak forward current
IFSM
A
t = 1 ms
t = 1 s
1
0.5
200
+150
150
total power dissipation
Storage temperature range
Junction temperature
Ptot
Tstg
Tj
mW
Ta mb = 25
-65
thermal resistance from junction to tie-point Rth j-t p
thermal resistance from junction to ambient Rth j-a
300
625
K/W
K/W
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Product specification
BAL99W
Electrical Characteristics Ta = 25
Parameter
Symbol
Test Conditions
IF = 1 mA
Max
715
855
1
Unit
mV
IF = 10 mA
Forward voltage
VF
IF = 50 mA
V
IF = 150 mA
1.25
30
VR = 25 V
nA
A
VR = 75 V
1
Reverse current
IR
30
VR = 25 V, Tj = 150
VR = 25 V, Tj = 150
f = 1.0 MHz, VR = 0
when switched from IF = 10 mA to IR = 10 mA;
A
50
A
Diode capacitance
Cd
trr
1.5
pF
Reverse recovery time
Forward recovery voltage
4
ns
V
RL = 100 ; measured at IR = 1 mA
Vf r
when switched from IF = 10 mA; tr = 20 ns
1.75
Marking
Marking
JF
http://www.twtysemi.com
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sales@twtysemi.com
4008-318-123
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