2SK3147S [TYSEMI]

Low on-resistance RDS = 0.1 typ. 4 V gate drive device can be driven from 5 V source; 低导通电阻RDS = 0.1 (典型值) 。 4 V栅极驱动器可以从5 V电源驱动
2SK3147S
型号: 2SK3147S
厂家: TY Semiconductor Co., Ltd    TY Semiconductor Co., Ltd
描述:

Low on-resistance RDS = 0.1 typ. 4 V gate drive device can be driven from 5 V source
低导通电阻RDS = 0.1 (典型值) 。 4 V栅极驱动器可以从5 V电源驱动

驱动器 栅极 栅极驱动
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2SK3147S-E

5A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3

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0 RENESAS

2SK3147STL-E

Silicon N Channel MOS FET High Speed Power Switching

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36 RENESAS

2SK3148

Silicon N Channel MOS FET High Speed Power Switching

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100 RENESAS

2SK3148

Silicon N Channel MOS FET High Speed Power Switching

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64 HITACHI

2SK3148-E

Silicon N Channel MOS FET High Speed Power Switching

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31 RENESAS

2SK3149

Silicon N Channel MOS FET High Speed Power Switching

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35 RENESAS

2SK3149

Silicon N Channel MOS FET High Speed Power Switching

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34 HITACHI

2SK3149-E

Silicon N Channel MOS FET High Speed Power Switching

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27 RENESAS

2SK315

FM Tuner Applications

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45 SANYO

2SK315

N-Channel Junction Silicon Field-Effect Transistor(FM Tuner Applications)

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64 SANYO

2SK3150

Silicon N Channel MOS FET High Speed Power Switching

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33 HITACHI

2SK3150

Silicon N Channel MOS FET High Speed Power Switching

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38 RENESAS

2SK3150(L)

TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 20A I(D) | TO-262AA

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11 ETC

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9 ETC

2SK3150(S)

TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 20A I(D) | TO-263AB

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28 ETC