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2SK1284 [TYSEMI]

Low on-state resistance RDS(on) 0.32 .VGS=10V,ID=2A Low Ciss Ciss=500pF TYP.; 低通态电阻RDS（on ） 0.32 .VGS = 10V ， ID = 2A低西塞西塞= 500pF的TYP 。
2SK1284
型号： 2SK1284
厂家： TY Semiconductor Co., Ltd    TY Semiconductor Co., Ltd
描述：

Low on-state resistance RDS(on) 0.32 .VGS=10V,ID=2A Low Ciss Ciss=500pF TYP.
低通态电阻RDS（on ） 0.32 .VGS = 10V ， ID = 2A低西塞西塞= 500pF的TYP 。
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TransistIoCrs  
Product specification  
2SK1284  
Features  
TO-252  
Unit: mm  
Low on-state resistance  
+0.15  
-0.15  
+0.1  
2.30  
-0.1  
6.50  
+0.2  
5.30  
-0.2  
+0.8  
0.50  
-0.7  
RDS(on) 0.32 .@VGS=10V,ID=2A  
RDS(on) 0.40 @VGS=4V,ID=2A  
Low Ciss Ciss=500pF TYP.  
Built-in G-S Gate Protection Diode  
0.127  
max  
+0.1  
0.80  
-0.1  
+0.1  
0.60  
-0.1  
2.3  
4.60  
1 Gate  
+0.15  
-0.15  
2 Drain  
3 Source  
Absolute Maximum Ratings Ta = 25  
Parameter  
Drain to source voltage  
Gate to source voltage  
Drain current (DC)  
Symbol  
VDSS  
VGSS  
ID  
Rating  
Unit  
V
100  
V
20  
3.0  
A
Drain current(pulse) *  
ID  
A
12  
2.0  
W
W
Power dissipation  
TC=25  
TA=25  
PD  
1.0  
Channel temperature  
Storage temperature  
Tch  
150  
Tstg  
-55 to +150  
* PW 10ms, duty cycle  
5%  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
IDSS  
IGSS  
VGS(off) VDS=10V,ID=1mA  
Testconditons  
VDS=100V,VGS=0  
VGS= 20V,VDS=0  
Min  
Typ  
Max  
10  
Unit  
A
Drain cut-off current  
Gate leakage current  
10  
A
Gate to source cutoff voltage  
Forward transfer admittance  
1.0  
2.4  
2.5  
V
VDS=10V,ID=2A  
VGS=10V,ID=2A  
VGS=4.0V,ID=2A  
s
Yfs  
0.26 0.32  
Drain to source on-state resistance  
RDS(on)  
0.32 0.40  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
Ciss  
Coss  
Crss  
td(on)  
tr  
500  
160  
20  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
VDS=10V,VGS=0,f=1MHZ  
40  
55  
ID=2A,VGS(on)=10V,RL=25  
,VDD=50V,RG=10  
Turn-off delay time  
Fall time  
td(off)  
tf  
500  
120  
http://www.twtysemi.com  
sales@twtysemi.com  
1 of 1  
4008-318-123  

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