2SC4226 [TYSEMI]
Low noise and high gain. NF = 1.2 dB Typ. VCE = 3V, IC= 7 mA, f = 1.0 GHz; 低噪声和高增益。 NF = 1.2 dB典型值。 VCE = 3V ， IC = 7 mA时， F = 1.0 GHz的
| 型号： | 2SC4226 |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | Low noise and high gain. NF = 1.2 dB Typ. VCE = 3V, IC= 7 mA, f = 1.0 GHz |
| 文件： | 总1页 (文件大小：79K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TransistIoCrs
Product specification
2SC4226
Features
Low noise and high gain.
NF = 1.2 dB Typ. @VCE = 3V, IC = 7 mA, f = 1.0 GHz
High gain.
|S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA
1 Emitter
2 Base
3 Collecotr
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Symbol
Rating
20
Unit
VCBO
VCEO
VEBO
IC
V
V
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
power dissipation
12
3.0
V
100
mA
mW
PC
150
Junction temperature
Storage temperature range
Tj
150
Tstg
-65 to +150
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Symbol
Testconditons
Min
Typ
Max
1.0
Unit
A
ICBO
IEBO
hFE
VCB = 10 V, IE = 0
VEB = 1.0 V, IC = 0
VCE = 3V, IC = 7 mA
1.0
A
40
7
110
9
250
2
Insertion power gain
Noise figure
VCE = 3V, IC = 7 mA, f = 1 GHz
VCE = 3 V, IC = 7 mA, f = 1 GHz
VCB = 3 V, IE = 0 , f = 1 MHz
VCE =3V, IC = 7 mA
dB
dB
S21e
NF
Cre
fT
1.2
0.7
4.5
2.5
1.5
Reverse transfer capacitance
Transition frequency
pF
3.0
GHz
*. Pulse measurement: PW
350 s, Duty Cycle
2%.
hFE Classification
Marking
Rank
R23
R23
R24
R24
R25
R25
hFE
40 80
70 140
125 250
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