2SC3734 [TYSEMI]
High speed : tstg 200ns. Collector-base voltage VCBO 60 V; 高速： TSTG 200ns的。集电极 - 基极电压VCBO 60 V
| 型号： | 2SC3734 |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | High speed : tstg 200ns. Collector-base voltage VCBO 60 V |
| 文件： | 总1页 (文件大小：61K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product specification
2SC3734
SOT-23
Unit: mm
+0.1
-0.1
2.9
0.4
+0.1
-0.1
3
Features
High speed : tstg 200ns.
1
2
+0.1
0.95
-0.1
+0.05
-0.01
0.1
+0.1
-0.1
1.9
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
60
Unit
V
40
V
6
V
Collector current
200
mA
Total power dissipation
at 25 ambient temperature
Junction temperature
Storage temperature
PT
200
mW
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Symbol
Testconditons
VCB = 30V, IE=0
Min
75
Typ
Max
100
100
300
0.3
Unit
nA
ICBO
IEBO
hFE
VEB = 3V, IC=0
nA
VCE = 1V , IC = 10mA
200
0.12
0.8
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Gain bandwidth product
Output capacitance
VCE(sat) IC = 50mA , IB = 5mA
VBE(sat) IC = 50mA , IB = 5mA
V
V
0.95
fT
Cob
ton
VCE = 20V , IE = -10mA
300
510
3.0
MHz
pF
ns
VCB = 5V , IE = 0 , f = 1.0MHz
VCC = 3V ,
4.0
70
Turn-on time
Storage time
tstg
toff
IC = 10mA ,
100
200
250
ns
Turn-off time
IB1 = -IB2 = 1mA
ns
*. PW 350ìs,duty cycle 2%
hFE Classification
Marking
hFE
B22
B23
B24
75 150
100 200
150 300
http://www.twtysemi.com
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sales@twtysemi.com
4008-318-123
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