2SC3439 [TYSEMI]
High hFE=400 to 1800. High collector current (Icm=3A,Ic=1.5A) Small package for mounting.; 高的hFE = 400 〜1800高集电极电流（ICM = 3A ， IC = 1.5A ），小型封装的安装。
| 型号： | 2SC3439 |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | High hFE=400 to 1800. High collector current (Icm=3A,Ic=1.5A) Small package for mounting. |
| 文件： | 总1页 (文件大小：77K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product specification
2SC3439
Features
High hFE=400 to 1800.
High collector current (Icm=3A,Ic=1.5A)
High collector dissipation Pc=500mW
Low VCE(sat) VCE(sat)=0.2V typ(@Ic=1a,IB=20mA)
Small package for mounting.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Emitter-base voltage
Collector-emitter voltage
Peak collector current
Collector current
Symbol
VCBO
VEBO
VCEO
ICM
Rating
Unit
V
30
6
V
25
V
3
1.5
A
IC
A
PC
500
mW
Collector dissipation (Ta=25
Jumction temperature
Storage temperature
)
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
30
6
Typ
Max
Unit
V
Colllector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
V(BR)CBO IC=10ìA,IE=0
V(BR)EBO IE=10ìA,IC=0
V
V(BR)CEO
25
V
IC=1mA,RBE=
ICBO
VCB=20V,IE=0
VEB=2V,IC=0
0.1
0.1
ìA
ìA
Emitter cutoff current
IEBO
DC current gain
hFE
VCE=6V,IC=500mA
400
1800
0.5
Collector-emitter saturation voltage
Gain bandwidth product
VCE(sat) IC=1A,IB=20mA
0.25
130
17
V
fT
VCE=10V,IE=-10mA
MHz
pF
Collector output capacitance
Cob
VCB=10V,IE=0,f=1MHz
hFE Classification
Marking
hFE
HG
HH
HJ
900 1800
400 800
600 1200
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