2SC3295 [TYSEMI]
High hFE: hFE = 600 3600. High voltage: VCEO = 50 V. High voltage: VCEO = 50 V.; 高的hFE ：的hFE = 600 3600高压： VCEO = 50V，高压： VCEO = 50V。
| 型号： | 2SC3295 |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | High hFE: hFE = 600 3600. High voltage: VCEO = 50 V. High voltage: VCEO = 50 V. |
| 文件： | 总1页 (文件大小：55K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistors
Product specification
2SC3295
SOT-23
Unit: mm
+0.1
-0.1
2.9
0.4
+0.1
-0.1
3
Features
High hFE: hFE = 600 3600.
High voltage: VCEO = 50 V.
High collector current: IC = 150 mA (max).
Small package.
1
2
+0.1
0.95
-0.1
+0.05
0.1
-0.01
+0.1
-0.1
1.9
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
50
50
V
5
150
V
mA
mA
mW
Base current
IB
30
Collector power dissipation
Junction temperature
Storage temperature range
PC
150
Tj
125
Tstg
-55 to +125
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
0.1
Unit
ìA
Collector cut-off current
Emitter cut-off current
DC current gain
ICBO
IEBO
hFE
VCB = 50 V, IE = 0
VEB = 5 V, IC = 0
0.1
ìA
VCE = 6 V, IC = 2 mA
600
100
3600
Collector-emitter saturation voltage
Transition frequency
VCE (sat) IC = 100 mA, IB = 10 mA
0.12 0.25
V
MHz
pF
fT
VCE = 10 V, IC = 10 mA
250
3.5
0.5
0.3
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
NF(1) VCE = 6 V, IC = 0.1 mA, f = 100 Hz, Rg = 10kÙ
NF(2) VCE = 6 V, IC = 0.1 mA, f = 100 Hz, Rg = 10kÙ
dB
Noise figure
dB
hFE Classification
Marking
hFE
PA
PB
600 1800
1200 3600
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