2SC2712 [TYSEMI]
High voltage and high current: VCEO = 50 V, IC = 150 mA (max) High hFE: hFE = 70 700; 高电压和高电流： VCEO = 50 V ， IC = 150 MA（最大值）高的hFE ：的hFE = 70 700
| 型号： | 2SC2712 |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | High voltage and high current: VCEO = 50 V, IC = 150 mA (max) High hFE: hFE = 70 700 |
| 文件： | 总3页 (文件大小：249K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product specification
2SC2712
SOT-23
Unit: mm
+0.1
-0.1
2.9
0.4
+0.1
-0.1
Features
3
High voltage and high current: VCEO = 50 V, IC = 150 mA (max)
Excellent hFE linearity : hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)= 0.95 (typ.)
High hFE: hFE = 70 700
1
2
+0.1
0.95
-0.1
Low noise: NF = 1dB (typ.), 10dB (max)
+0.05
-0.01
0.1
+0.1
-0.1
1.9
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
60
Collector-emitter voltage
Emitter-base voltage
Collector current
50
V
5
150
V
mA
mA
mW
Base current
IB
30
Collector power dissipation
Junction temperature
Storage temperature range
PC
150
Tj
125
Tstg
-55 to +125
Electrical Characteristics Ta = 25
Parameter
Symbol
ICBO
Testconditons
Min
70
Typ
Max
Unit
A
Collector cut-off current
Emitter cut-off current
VCB = 60 V, IE = 0
VEB = 5 V, IC = 0
0.1
0.1
IEBO
A
DC current gain
hFE
VCE = 6 V, IC = 2 mA
700
0.25
3.5
Collector-emitter saturation voltage
Collector output capacitance
VCE (sat) IC = 100 mA, IB = 10 mA
0.1
2
V
Cob
NF
fT
VCB = 10V, IE = 0, f = 1 MHz
pF
VCE = 6 V, IC = 0.1 mA , f = 1 KHz,
RG=10KÙ
Noise figure
1
10
dB
Transition frequency
VCE = 10V, IC =1 mA
80
MHz
hFE Classification
Marking
Rank
LO
O
LY
Y
LG
LL
BL
GR
hFE
70 140
120 240
200 400
350 700
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Product specification
2SC2712
Typlcal Characteristics
Fig.2 Collector Current
Fig.1 Collector Emitter Voltage
Fig.3 Collector Current
Fig.4 Collector Current
Fig.6 Base Emitter Voltage
Fig.5 Collector Current
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4008-318-123
Product specification
2SC2712
Fig.7 Collector Current
Fig.8 Collector Emitter Voltage
Fig.9 Ambient Temperature
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