2SA1729 [TYSEMI]

Adoption of FBET, MBIT Process. Low Collector-to-Emitter Saturation Voltage.; 采用FBET ， MBIT过程。低集电极 - 发射极饱和电压。

2SA1729


型号：	2SA1729
厂家：	TY Semiconductor Co., Ltd
描述：	Adoption of FBET, MBIT Process. Low Collector-to-Emitter Saturation Voltage. 采用FBET ， MBIT过程。低集电极 - 发射极饱和电压。晶体晶体管开关
文件：	总3页 (文件大小：525K)
下载：	下载PDF数据表文档文件

2SA1729_15

PNP Transistors

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0 KEXIN

2SA1729Q

TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 1.5A I(C) | SOT-89

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12 ETC

2SA1729-Q

PNP Transistors

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0 KEXIN

2SA1729R

TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 1.5A I(C) | SOT-89

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11 ETC

2SA1729-R

PNP Transistors

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0 KEXIN

2SA1729S

TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 1.5A I(C) | SOT-89

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25 ETC

2SA1729-S

PNP Transistors

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0 KEXIN

2SA1730

High-Speed Switching Applications

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53 SANYO

2SA1730

PNP Epitaxial Planar Silicon

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7 KEXIN

2SA1730

Adoption of FBET , MBIT processes. Low collector-to-emitter saturation voltage.

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14 TYSEMI

2SA1730_15

PNP Transistors

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0 KEXIN

2SA1730Q

TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 3A I(C) | SOT-89

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8 ETC

2SA1730-Q

PNP Transistors

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0 KEXIN

2SA1730R

TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 3A I(C) | SOT-89

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8 ETC

2SA1730-R

PNP Transistors

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0 KEXIN

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