2SA1580 [TYSEMI]
High fT. Small reverse transfer capacitance. Adoption of FBET process.; 高英尺。小的反向传输电容。采用FBET过程。
| 型号： | 2SA1580 |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | High fT. Small reverse transfer capacitance. Adoption of FBET process. |
| 文件： | 总1页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product specification
2SA1580
SOT-23
Unit: mm
+0.1
-0.1
2.9
0.4
+0.1
-0.1
Features
3
High fT.
Small reverse transfer capacitance.
Adoption of FBET process.
1
2
+0.1
0.95
-0.1
+0.05
0.1
-0.01
+0.1
-0.1
1.9
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
-70
Unit
V
-60
V
-4
V
-50
mA
mA
mW
Collector current (pulse)
Collector dissipation
Icp
-100
200
PC
Junction temperature
Storage temperature
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
VCB = -40V, IE=0
Min
Typ
Max
-0.1
-1
Unit
ìA
Collector cutoff current
ICBO
IEBO
hFE
fT
Emitter cutoff current
VEB = -3V, IC=0
ìA
DC current gain
VCE = -10V , IC = -10mA
VCE = -10V , IC = -10mA
60
270
Gain bandwidth product
350
700
8
MHz
ps
pF
pF
V
Base-collector time constant
Output capacitance
rbb,cc VCE = -10V , IC = -10mA
Cob
Cre
VCB = -10V , f = 1.0MHz
VCB = -10V , f = 1.0MHz
1.7
1.3
Reverse transfer capacitance
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
VCE(sat) IC = -20mA , IB = -2mA
VBE(sat) IC = -20mA , IB = -2mA
V(BR)CBO IC = -10ìA , IE = 0
-0.6
-1
V
-70
-60
-4
V
V(BR)CEO
V
IC = -1mA , RBE =
V(BR)EBO IE = -10ìA , IC = 0
V
hFE Classification
QL
4
Marking
Rank
3
5
hFE
60 120
90 180
135 270
1
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