7700B [TTELEC]
Power Factor Correction Power Module; 功率因数校正电源模块
| 型号： | 7700B |
| 厂家： | 
TT Electronics |
| 描述： | Power Factor Correction Power Module |
| 文件： | 总8页 (文件大小：87K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NEW HIGHER POWER VERSION
MODEL 7700 SERIES
Power Factor Correction
Power Module
MODELS/RANGE
7700B
7700-2A
1,500 Watts / 3,000 Watts
2,000 Watts / 4,000 Watts
FEATURES AND BENEFITS
• Module contains all power components necessary to provide power factor correction in a switching power supply.
- Rectifier bridge with SCRs for inrush current limiting
- Ultrafast platinum output diode
- 500V .1Ω Max. FET (7700B)
- Low gate charge, 500V, .0675Ω max. FET (7700-2A)
• Provides optimum use of available line current
• Allows power supply to meet harmonic requirement
• Module design reduces cost of heat sink
• Saves significant space and assembly time
• Low cost
• Internal temperature sensing
• Replaces up to 10 each TO-220 or TO-247 discrete power semiconductors
• Custom module versions available to meet specific requirements such as:
- Motor drives
- Power servo amplifiers
- Solenoid drivers
- Solid state relays
7
- 3 phase rectifier bridges
APPLICATIONS
Designed to optimally facilitate a boost type power
factor correction (PFC) system for designs with up to
36A rms input current.
Standard applications include switching power supplies
from 1,000 watts to 4,000 watts with line voltages up to
300 V rms.
Specifications subject to change without notice.
Model 7700 Series
7-19
ELECTRICAL CHARACTERISTICS
Parameter
MOS FET
Continuous Drain Current
Symbol
Conditions1
T = 25°C
Model
Min. Typ. Max. Units
I
B
-2A
B
-2A
B
-2A
B
-2A
B
-2A
B
-2A
B, -2A
B, -2A
B
-2A
B, -2A
B, -2A
B
56
80
A
A
D
C
T = 100°C
34.8
48
A
A
C
Pulsed Drain Current
I
224
320
760
960
19
28
8.7
20
A
A
DM
Single Pulse Avalanche Energy E
mJ
mJ
mJ
mJ
A
AS
AR
AR
Repetitive Avalanche Energy
Avalanche Current
E
I
A
Gate to Source Voltage
Leakage Current
Drain to Source ON Voltage
V
30
V
GS
I
V
= 0V, V = 500V
100
2.8
2.7
µA
V
V
DSS
GS
DS
GS
V
I = 28A, V = 10V
1.5
1.0
2.0
DS(ON)
C
Gate Threshold Voltage
Gate Leakage Current
Total Gate Charge
Gate Source Charge
Gate Drain (Miller) Charge
Total Gate Charge
Gate Source Charge
Gate Drain (Miller) Charge
Continous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
V
V
= V I = 1mA
GS, D
4.0
400
600
80
320
480
128
196
56
V
GS(TH)
GSS
DS
I
V
20V
nA
nC
nC
nC
nC
nC
nC
A
GS
Qg
I
= 56A, V = 400V
D DS
Qgs
Qgd
Qg
Qgs
Qgd
V
= 10V
B
B
GS
I
= 80A, V = 400V
-2A
-2A
-2A
B
-2A
B
-2A
B
-2A
B
D
DS
V
= 10V
GS
I
S
80
A
I
224
320
1.4
1.8
810
860
28.8
39.6
A
A
V
V
ns
ns
ns
ns
SM
Body Diode Forward Voltage
V
I
I
I
I
I
I
= 56A, V = 0V
0.4
0.5
SD
S
S
F
F
F
F
GS
= 80A, V = 0V
GS
Reverse Recovery Time
(Body Diode)
Reverse Recovery Charge
(Body Diode)
trr
= 56A, di/dt = 400Aµs
= 80A, di/dt = 400Aµs
= 56A, di/dt = 400Aµs
= 80A, di/dt = 400Aµs
-2A
B
-2A
Qrr
Internal Gate Resistor
R
G
B
1.25
0.25
Ω
-2A
B, -2A
Ω
°C
Junction Temperature
Thermal Resistance
T
150
J
R
THJC
B
-2A
0.20 .025 °C/W
.15 .20 °C/W
Model 7700 Series
7-20
ELECTRICAL CHARACTERISTICS
Parameter
SCRS
Symbol
Conditions1
Model
Min. Typ. Max. Units
Average On Current
I
T = 75°C, 180° half
C
sine wave
B
-2A
B
20
35
30
A
A
A
T(AV)
RMS
RMS On Current
I
(As AC switch)
Peak Repetitive Off Voltage
-2A
B
-2A
B
-2A
B
-2A
B
55
A
V
V
A
V
V
600
800
300
400
25
300
1.6
1.6
3.5
1.5
1.5
60
RRM/
DRM
TSM
Peak One Cycle Non-Repetitive I
Surge Current
Reverse and Direct Leakage
Current
T = T Max., t = 10ms
(50 Hz), sine
J
J
A
I /I
V
= V
V
= V
DRM
µA
µA
V
V
V
R D
R
RRM,
D
On Voltage
V
I = 25A
0.5
0.5
0.2
0.3
0.1
5
T
T
I = 45A
-2A
B, -2A
B, -2A
T
Gate Trigger Voltage
(Includes drop across R )
G
V
V = 6V, 22Ω
GT
D
V = 6V, 22Ω. T = -40°C
V
V
D
J
V = 6V, 22Ω. T = 125°C B, -2A
D
J
Gate Trigger Current
(Each SCR Individually)
V
V = 6V, 22Ω
B, -2A
B, -2A
mA
mA
mA
mA
mA
Ω
Ω
°C
GT
D
V = 6V, 22Ω. T = -40°C
10
2
120
35
100
100
D
J
V = 6V, 22Ω. T = 125°C B, -2A
D
J
Holding Current
I
(Each SCR Individually)
Connected to each SCR
B
-2A
B
-2A
B, -2A
H
Internal Gate Resistor
R
10
10
G
Junction Temperature
Thermal Resistance
T
150
j
R
thjc
B
-2A
1.4
0.7
2.0 °C/W
1.0 °C/W
Bridge Diodes
Average Forward Current
I
T = 105°C, 180°, half
C
sine wave
B
-2A
B
-2A
B
-2A
B
-2A
B
20
40
A
A
V
V
A
F(AV)
7
Peak Repetitive Reverse
Voltage
Peak One Cycle Non-Repetitive I
Surge Current
V
600
800
300
400
100
300
1.2
RRM
FSM
R/
T = T Max., t = 10ms
J
J
(50 Hz), sine
A
Reverse Leakage Current
I
V
= V
µA
µA
V
V
°C
R
RRM
Forward Voltage
V
I = 25A
0.5
0.5
F
F
I = 40A
-2A
B, -2A
1.2
150
F
Junction Temperature
Thermal Resistance
T
R
J
THJC
B
-2A
1.5
1.0
1.8 °C/W
1.2 °C/W
Model 7700 Series
7-21
ELECTRICAL CHARACTERISTICS
Parameter
Output Diode
Average Forward Current
Symbol
Conditions1
T = 120°C
Model
Min. Typ. Max. Units
I
B
-2A
B, -2A
24
60
600
A
A
V
F(AV)
C
Peak Repetitive Reverse
Voltage
Peak One Cycle Non-Repetitive I
Surge Current
V
RRM
FSM
R/
T = T Max., t = 10ms
B
-2A
B
-2A
B
-2A
B
-2A
B, -2A
500
500
60
A
A
µA
mA
V
J
J
(50 Hz), sine
Reverse Leakage Current
I
V
= V
R
RRM
1
Forward Voltage
V
I = 24A
1.0
0.5
2.8
2.8
35
40
175
F
F
I = 50A
V
F
Reverse Recovery Time
trr
I
I
= 6A, di/dt = 300Aµs
= 2A, di/dt = 200Aµs
ns
ns
°C
F
F
Junction Temperature
Thermal Resistance
T
J
R
THJC
B
-2A
0.9
0.75
1.0 °C/W
0.9 °C/W
TH1 NTC Thermistor
Resistance
Resistance Ratio
R
I = 1mA
B, -2A
B, -2A
B, -2A .0916
B, -2A .0679
B, -2A .0511
B, -2A
22.5
.126
25 27.5
KΩ
25
R /R
T = 80°C
T = 90°C
T = 100°C
T = 110°C
T
25
Dissipation Constant
Thermal Time Constant
P
t
1.0
mW/°C
10 sec
D
B, -2A
1 - TCase = 25°C unless otherwise specified.
Model 7700 Series
7-22
SYSTEM DIAGRAM
4
3
C
T
Vo
8
9
L1
C
T
1
7
+
Load
2
Co
AC
Line
Dotted line denotes
BI Model 7700 and
associated pins.
5
14
12
11 10
13
6
Gate
Driver
Pin 1: AC 1
Pin 2: AC 2
Pin 3: Bridge Output
Pin 4: SCR Gates
Pin 5: Ground
Thermal
Shutdown
Circuitry
PFC PWM
Pin 6: Ground
Pin 7: FET Drain
Pin 8: Ultrafast Anode
Pin 9: Ultrafast Cathode
Pin 10: Gate Ground
Pin 11: Gate Drive
Pin 12: N.C.
Pin 13: TH 1
Pin 14: TH 2
7
Model 7700 Series
7-23
OUTLINE DIMENSIONS (Inch)
3.050 Max.
2.560
Pin .050 x .020
14 Places
.505
±.010
Pin 14
R .235
.950
1.100±.015
.280
.150
1.440 Max.
.160 Ref.
Pin 1
.330
6X .175
6X .275
.075 Ref.
.150
.154±.015
.515 Ref.
.361
.286
Part Number
Lot Number
Date Code
ORDERING INFORMATION
77
0
0
B
Model
Range, Watts:
B = 1,500 to 3,000 Watts
-2A = 2,000 to 4,000 Watts
Package
Circuit Function:
0 = Power Factor Correction
Model 7700 Series
7-24
MODEL 7700 APPLICATION NOTES
OUTPUT CAPACITOR
OUTPUT VOLTAGE
The output capacitor size is often limited by the line
dropout requirements of the power supply:
The dc output voltage must be greater than the highest
peak line voltage expected:
2xP x td
OUT
V >VIN MAX x 1.414
O
CO MIN
=
2
V2 - V
O
O MIN
Where: P
is the output power, td is the dropout
is the minimum allowed output
DISCONTINUOUS CONDUCTION
OUT
time, and V
voltage.
O MIN
When the line voltage approaches zero volts the PFC
PWM will be forced towards its maximum duty cycle.
This will cause the current to become discontinuous,
which will result in some distortion. The line voltage
at which the current will become discontinuous will be:
The 120Hz output voltage ripple can be calculated
to insure it meets the system requirements:
2xP
1
O
V
=
x
+ESR
O
O P–P 120
( V ) (2xπxfxC
)
VO x (1-DCMAX
DCMAX
)
O
V
=
IN discontinuous
The maximum rms 120Hz ripple current will be:
The line voltage at which the PWM will be duty cycle
limited will be:
1.414 x P
O
IRMS 120
=
V
O
V
IN duty cycle limited = V x (1-DCMAX)
O
The 100KHz output voltage ripple will be:
INDUCTOR L1
)
V x (1-(1.414 x V
)
IN
IN
1
V
O
VO P–P 100K
=
x
+ESR
)
(
The inductor value controls the amplitude of the
100KHz current ripple. This can greatly effect the
amount of distortion and thus the amount of EMI
filtering required on the input. Ripple current can
be calculated for any point along the input sine wave:
L x f
2xπxfxCO
The maximum rms 100KHz ripple current will be:
V x (1-1.414 x V
)
IN
IN
VO
IRMS 100K
=
2.828 x Lx f
7
V (t)x DC(t)
IN
IP–P (t)=
GATE DRIVE REQUIREMENTS
Lx f
FET switching times must be fast enough to insure that
the FET turns off when the PWM is at maximum duty
cycle. Snubbing circuits across the FET will slow the
turn off time and should not be used.
Where: DC(t)=1-V (t)/V , L is the inductance of
IN
O
L1, and f is the switching frequency.
A good starting point would be to set Ip-p equal to
20% of the 120 Hz peakcurrent, solving for L:
A discrete gate driver circuit will allow the fastest
possible switching times. The Unitrode UC3710 or
Telcom TC4422 drivers offer a single chip approach
5xV 2x (1-1.414 x V
)
IN
IN
VO
L ≥
P x f
IN
Model 7700 Series
7-25
MODEL 7700 APPLICATION NOTES
with only slightly slower switching times. The gate
driver must be located as close to the module as
possible. Ground sense pin 10 should be used to insure
the fastest possible switching times.
HEAT RADIATOR
The heat radiator requirements can be determined
by the maximum power dissipated (at low line) and
the maximum ambient temperature. The back side
of the module should be limited to about 100°C by
utilizing the internal thermistor.
100 - TMAX
AMB
RΘ =
P LOWLINE
O
Care should be used when attaching the module
to the heat radiator. The screws must be tightened
incrementally in a crisscross pattern. A torque
limiting screwdriver should be used.
The high current levels require currrent sense
transformers to maintain a reasonable efficiency.
We recommend BI Technologies HM31-20200.
PFC PWM VENDORS
Popular sources are:
Unitrode UC3854
Micro Linear ML4812
Linear Technology LT1248
Model 7700 Series
7-26
相关型号：
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