2N4854U [TTELEC]
Surface Mount NPN/ PNP Complementary Transistor;
| 型号： | 2N4854U |
| 厂家： | 
TT Electronics |
| 描述： | Surface Mount NPN/ PNP Complementary Transistor 晶体管 |
| 文件： | 总4页 (文件大小：498K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Surface Mount NPN/ PNP
Complementary Transistor
2N4854U (TX, TXV)
Features:
Ceramic 6 pin surface mount package
Small package to minimize circuit board area
Hermetically sealed
Processed per MIL-PRF-19500/421
Description:
The 2N4854U (TX, TXV) are hermeꢀcally sealed, ceramic surface mount complementary NPN/PNP transistor pair. The “U”
suffix denotes the six terminal (C‐6) leadless chip carrier package opꢀon. The miniature six pin ceramic package is ideal for
designs where board space and device weight are important design consideraꢀons.
Typical screening and lot acceptance tests are per MIL‐PRF‐19500/421. The burn‐in condiꢀon is VCB = 30 V, PD = 300 mW
each transistor, TA = 25°C. Refer to MIL‐PRF‐19500/421 for complete requirements.
When ordering parts without processing, do not us the TX or TXV suffix.
Applications:
General switching
Amplification
Signal processing
Radio transmission
Logic gates
Pin #
PNP
Transistor
Pin #
NPN
3
4
Base
2
1
Base
Collector
Collector
5
Emiꢁer
6
Emiꢁer
General Note
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
Issue C 08/2016 Page 1
© TT electronics plc
Surface Mount NPN/ PNP
Complementary Transistor
2N4854U (TX, TXV)
Electrical Specifications
Absolute Maximum Ratings (TA = 25° C unless otherwise noted.) See Note 3
NPN to PNP Isolaꢀon Voltage
500 VDC
60 V
Collector‐Base Voltage
Collector‐Emiꢁer Voltage
40 V
Emiꢁer‐Base Voltage
5.0 V
Collector Current‐Conꢀnuous
600 mA
Operaꢀng Juncꢀon Temperature (TJ)
‐65° C to +200 °C
‐65° C to +200° C
0.6 W
Storage Juncꢀon Temperature (Tstg)
Power Dissipaꢀon @ TA = 25°C (both transistors driven equally)
Power Dissipaꢀon @ Tc = 25° C (both transistors driven equally)
Soldering Temperature (vapor phase reflow for 30 seconds)
Soldering Temperature (heated collet for 5 seconds)
2.0 W(1)
215° C
260° C
Electrical Characteristics (TA = 25° C unless otherwise noted)
SYMBOL
PARAMETER
MIN MAX UNITS
TEST CONDITIONS
OFF CHARACTERISTICS
V(BR)CBO Collector‐Base Breakdown Voltage
V(BR)CEO Collector‐Emiꢁer Breakdown Voltage
V(BR)EBO Emiꢁer‐Base Breakdown Voltage
60
40
5
V
V
IC = 10 µA, IE = 0
IC = 10 mA, IB = 0(2)
IE = 10 µA, IC = 0
VCB = 50 V, IE = 0
V
10
10
10
nA
µA
nA
ICBO
Collector‐Base Cutoff Current
V
CB = 50 V, IE = 0, TA = 150° C
IEBO
Emiꢁer‐Base Cutoff Current
VEB = 3 V, IC = 0
ON CHARACTERISTICS
50
35
50
75
‐
‐
‐
‐
‐
‐
‐
V
V
V
V
V
CE = 10 V, IC = 150 mA(2)
CE = 10 V, IC = 0.1 mA
CE = 10 V, IC = 1.0 mA
CE = 10 V, IC = 10 mA(2)
CE = 10 V, IC = 150 mA(2)
hFE
Forward‐Current Transfer Raꢀo
100 300
35
12
VCE = 10 V, IC = 300 mA(2)
VCE = 10 V, IC = 10 mA, TA = ‐55°C
Note: 1. Derate linearly 6.6 mW/°C above 25° C
3. Polariꢀes given are for the NPN device. Reverse polarity on limits & condiꢀons
2. Pulse Width ≤300 µs, Duty Cycle ≤ 2.0%
as applicable for the PNP side.
General Note
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
Issue C 08/2016 Page 2
© TT electronics plc
Surface Mount NPN/ PNP
Complementary Transistor
2N4854U (TX, TXV)
Electrical Characteristics (TA = 25° C unless otherwise noted)
SYMBOL
PARAMETER
MIN MAX UNITS
TEST CONDITIONS
ON CHARACTERISTICS
VCE (SAT) Collector‐Emiꢁer Saturaꢀon Voltage
VBE(SAT) Base‐Emiꢁer Saturaꢀon Voltage
SMALL‐SIGNAL CHARACTERISTICS
0.40
V
V
IC = 150 mA, IB= 15 mA(2)
IC = 150 mA, IB= 15 mA(2)
0.8
1.5
Small Signal Common Emiꢁer Input
Impedance
| hie |
9
50
300
8
kΩ
µmho
‐
Small Signal Common Emiꢁer Output
Admiꢁance
| hoe
hfe
|
VCE = 10 V, IC = 1.0 mA, f = 1.0 kHZ
Small Signal Current Transfer Raꢀo
60
2
NF
Noise Figure
db
f = 1.0 kHZ, RG = 1.0 kΩ, IC = 0.1 mA, VCE = 10 V
Small Signal Forward Current Transfer
Raꢀo
| hfe |
Cobo
8
8
‐
VCE = 20 V, IC = 20 mA, f = 100 MHz
Open Circuit Output Capacitance
pF
VCB = 10 V, 100 kHz ≤ f ≤ 1.0 MHZ
SWITCHING CHARACTERISTICS
ton
toff
Turn‐On Time
Turn‐Off Time
45
ns
ns
VCC = 30 V, IC = 150 mA, IB1 = 15 mA
300
VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15 mA
Note: 1. Derate linearly 6.6 mW/°C above 25° C
3. Polariꢀes given are for the NPN device. Reverse polarity on limits & condiꢀons
2. Pulse Width ≤300 µs, Duty Cycle ≤ 2.0%
as applicable for the PNP side.
General Note
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
Issue C 08/2016 Page 3
© TT electronics plc
Surface Mount NPN/ PNP
Complementary Transistor
2N4854U (TX, TXV)
Standard Packaging:
Waffle Pack
General Note
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
Issue C 08/2016 Page 4
© TT electronics plc
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