TSI10H120CW [TSC]
10A, 100V - 200V Trench Schottky Rectifiers;
| 型号： | TSI10H120CW |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 10A, 100V - 200V Trench Schottky Rectifiers |
| 文件： | 总5页 (文件大小：245K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSI10H100CW - TSI10H200CW
Taiwan Semiconductor
10A, 100V - 200V Trench Schottky Rectifiers
FEATURES
- Patented Trench Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Low power loss/ high efficiency
- High forward surge capability
1
- Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
2
3
I2PAK
- Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
Trench Schottky barrier rectifier are designed for high frequency
miniature switched mode power supplies such as adapters, lighting
and on-board DC/DC converters.
MECHANICAL DATA
Case: I2PAK
Molding compound meets UL 94 V-0 flammability rating
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity: As marked
Weight: 1.6 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
TSI10H
100CW
100
TSI10H
120CW
120
TSI10H
150CW
150
TSI10H
200CW
200
PARAMETER
SYMBOL
VRRM
UNIT
Maximum repetitive peak reverse voltage
V
A
per device
per diode
10
5
Maximum average forward
rectified current
IF(AV)
Peak forward surge current, 8.3ms single half
sine-wave superimposed on rated load per diode
IFSM
100
A
Voltage rate of change (Rated VR)
10000
dV/dt
V/μs
TYP MAX TYP MAX TYP MAX TYP MAX
0.62 0.70 0.69 0.79 0.78 0.88 0.81 0.91
0.55 0.63 0.58 0.66 0.64 0.72 0.67 0.75
IF = 5A
IF = 5A
TJ = 25°C
Instantaneous forward
voltage per diode (Note1)
VF
IR
V
TJ = 125°C
TJ = 25°C
TJ = 125°C
-
-
100
15
-
-
100
15
-
100
10
-
100
10
μA
mA
°C/W
°C
Instantaneous reverse current per
diode at rated reverse voltage
1.5
1.5
Typical thermal resistance per diode
Operating junction temperature range
Storage temperature range
RθJC
TJ
3.2
- 55 to +150
- 55 to +150
TSTG
°C
Note 1: Pulse test with pulse width=300μs, 1% duty cycle
Document Number: DS_D0000003
Version: A15
TSI10H100CW - TSI10H200CW
Taiwan Semiconductor
ORDER INFORMATION (EXAMPLE)
TSI10H150CW C0G
Green compound code
Packing code
Part no.
RATINGS AND CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
FIG. 1 FORWARD CURRENT DERATING CURVE
FIG. 2 TYPICAL FORWARD CHARACTERISTICS
12
100
10
TSI10H100CW
10
8
TJ=150oC
TJ=125oC
6
1
TJ=100oC
4
WITH HEATSINK
3in x 5in x 0.25in
Al-Plate
0.1
0.01
TJ=25oC
2
0
0
25
50
75
100
125
150
0.0
0.2
0.4
0.6
0.8
1.0
CASE TEMPERATURE (oC)
FORWARD VOLTAGE (V)
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
FIG. 4 TYPICAL FORWARD CHARACTERISTICS
100
10
100
10
TSI10H150CW
TSI10H120CW
TJ=150oC
TJ=150oC
TJ=125oC
TJ=100oC
TJ=25oC
TJ=125oC
TJ=100oC
TJ=25oC
1
1
0.1
0.01
0.1
0.01
0
0.2
0.4
0.6
0.8
1
0
0.2
0.4
0.6
0.8
1
FORWARD VOLTAGE (V)
FORWARD VOLTAGE (V)
Document Number: DS_D0000003
Version: A15
TSI10H100CW - TSI10H200CW
Taiwan Semiconductor
FIG. 5 TYPICAL FORWARD CHARACTERISTICS
FIG. 6 TYPICAL REVERSE CHARACTERISTICS
100
10
100
10
TSI10H200CW
TSI10H100CW
TJ=150oC
TJ=125oC
TJ=150oC
1
TJ=100oC
0.1
1
TJ=125oC
0.01
TJ=100oC
0.001
0.0001
0.00001
TJ=25oC
0.1
0.01
TJ=25oC
10
20
30
40
50
60
70
80
90
100
0
0.2
0.4
0.6
0.8
1
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FORWARD VOLTAGE (V)
FIG. 8 TYPICAL REVERSE CHARACTERISTICS
FIG. 7 TYPICAL REVERSE CHARACTERISTICS
100
10
100
10
TSI10H150CW
TSI10H120CW
TJ=150oC
TJ=125oC
1
1
TJ=150oC
TJ=125oC
0.1
0.1
TJ=100oC
TJ=100oC
0.01
0.01
0.001
0.0001
0.00001
0.001
0.0001
0.00001
TJ=25oC
TJ=25oC
10
20
30
40
50
60
70
80
90
100
10
20
30
40
50
60
70
80
90
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 10 TYPICAL JUNCTION CAPACITANCE
FIG. 9 TYPICAL REVERSE CHARACTERISTICS
100
10
10000
1000
100
TSI10H200C
f=1.0MHz
Vsig=50mVp-p
TSI10H100C
TSI10H120C
1
TJ=150oC
TJ=125oC
0.1
TJ=100oC
0.01
0.001
0.0001
0.00001
TSI10H150C
TSI10H200C
TJ=25oC
10
10
20
30
40
50
60
70
80
90
100
0.1
1
10
100
REVERSE VOLTAGE (V)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Document Number: DS_D0000003
Version: A15
TSI10H100CW - TSI10H200CW
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
I2PAK
Unit (mm)
Min
Unit (inch)
Min Max
DIM.
Max
10.50
1.40
4.20
0.94
2.67
9.47
9.35
4.70
1.40
2.80
0.64
1.45
A
B
C
D
E
F
G
H
I
-
-
0.413
0.055
0.165
0.037
0.105
0.373
0.368
0.185
0.055
0.110
0.025
0.057
1.14
2.80
0.68
2.41
9.07
7.79
4.40
1.14
2.20
0.35
0.95
0.045
0.110
0.027
0.095
0.357
0.307
0.173
0.045
0.087
0.014
0.037
J
K
L
MARKING DIAGRAM
P/N
G
= Marking Code
= Green Compound
= Date Code
YWW
F
= Factory Code
Document Number: DS_D0000003
Version: A15
TSI10H100CW - TSI10H200CW
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to any
intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for
such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale
and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability,
or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers
using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for
any damages resulting from such improper use or sale.
Document Number: DS_D0000003
Version: A15
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