TSC5988 [TSC]
NPN Silicon Planar Medium Power Transistor; NPN硅平面中功率晶体管
| 型号： | TSC5988 |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | NPN Silicon Planar Medium Power Transistor |
| 文件： | 总5页 (文件大小：204K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSC5988
NPN Silicon Planar Medium Power Transistor
TO-92
Pin Definition:
1. Emitter
PRODUCT SUMMARY
2. Base
3. Collector
BVCBO
BVCEO
IC
150V
60V
6A
VCE(SAT)
0.55V @ IC / IB = 6A / 300mA
Features
Ordering Information
●
Excellent gain characteristics specified up to 10A
Part No.
TSC5988CT B0
TSC5988CT A3
Package
Packing
1Kpcs / Bulk
2Kpcs / Ammo
Structure
TO-92
TO-92
●
Epitaxial Planar Type
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Limit
150
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VCBO
VCEO
VEBO
60
V
6
V
DC
5
20
Collector Current
IC
A
Pulse
Total Power Dissipation
Ptot
TJ
1.0
W
oC
oC
Operating Junction Temperature
+150
Operating Junction and Storage Temperature Range
TSTG
- 55 to +150
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
IC =100uA, IE =0
Symbol
BVCBO
Min
Typ
170
70
Max
--
Unit
Collector-Base Breakdown Voltage
150
60
6
V
V
Collector-Emitter Breakdown Voltage IC =10mA, IB =0
BVCEO
--
Emitter-Base Breakdown Voltage
IE =100uA, IC =0
BVEBO
8
--
V
VCB =120V, IE =0
VCB =120V, TA =100ºC
VEB =6V, IC =0
--
--
50
1
nA
uA
nA
Collector Cutoff Current
ICBO
--
--
Emitter Cutoff Current
IEBO
--
--
10
50
120
220
--
IC =100mA, IB =5mA
IC =1A, IB =50mA
IC =2A, IB =100mA
IC =5A, IB =200mA
IC =4A, IB =200mA
VCE =1V, IC =6A
VCE(SAT)
VCE(SAT)
VCE(SAT)
VCE(SAT)
1
2
3
4
--
20
--
80
Collector-Emitter Saturation Voltage
mV
--
150
260
920
1.05
--
--
Base-Emitter Saturation Voltage
Base-Emitter on Voltage
VBE(SAT)
VBE(ON)
--
1050
1.2ꢀ
--
mV
V
--
VCE =1V, IC =10mA
VCE =1V, IC =2A
hFE
hFE
hFE
hFE
fT
1
2
3
4
100
120
75
--
200
140
70
300
--
DC Current Transfer Ratio
VCE =1V, IC =5A
VCE =1V, IC =10A
VCE =10V, IC=100mA
VCB =10V, f=1MHz
--
Transition Frequency
Output Capacitance
--
130
72
--
MHz
pF
Cob
--
--
1/5
Version: C08
TSC5988
NPN Silicon Planar Medium Power Transistor
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Figure 1. DC Current Gain vs. Collector Current
Figure 2. VCE(SAT) vs. Collector Current
Figure 3. VBE(SAT) vs. Collector Current
Figure 4. fT vs. Emitter Current
Figure 5. Cob vs. Collector-Base Voltage
Figure 6. Cib vs. Emitter-Base Voltage
2/5
Version: C08
TSC5988
NPN Silicon Planar Medium Power Transistor
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Figure 7. Safety Operation Area
Figure 8. Derating Curve
3/5
Version: C08
TSC5988
NPN Silicon Planar Medium Power Transistor
TO-92 Mechanical Drawing
TO-92 DIMENSION
MILLIMETERS
INCHES
DIM
MIN
4.30
4.30
MAX
4.70
4.70
MIN
MAX
0.185
0.185
A
B
C
D
E
F
0.169
0.169
14.30(typ)
0.563(typ)
0.43
1.18
3.30
1.27
0.37
0.49
1.28
3.70
1.31
0.43
0.017
0.046
0.130
0.05
0.019
0.050
0.146
0.051
0.017
G
H
0.015
Marking Diagram
Y = Year Code
M = Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep,
J=Oct, K=Nov, L=Dec)
L = Lot Code
4/5
Version: C08
TSC5988
NPN Silicon Planar Medium Power Transistor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to any
intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for
such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale
and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability,
or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers
using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for
any damages resulting from such improper use or sale.
5/5
Version: C08
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