SS210 [TSC]
2.0 AMPS. Surface Mount Schottky Barrier Rectifiers; 2.0安培。表面贴装肖特基整流器
| 型号： | SS210 |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 2.0 AMPS. Surface Mount Schottky Barrier Rectifiers |
| 文件： | 总2页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SS22 THRU SS210
2.0 AMPS. Surface Mount Schottky Barrier Rectifiers
Voltage Range
20 to 100 Volts
Current
2.0 Amperes
SMB/DO-214AA
Features
.082(2.08)
.076(1.93)
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ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
For surface mounted application
Metal to silicon rectifier, majority carrier conduction
Low forward voltage drop
.147(3.73)
.137(3.48)
Easy pick and place
High surge current capability
Plastic material used carriers Underwriters
Laboratory Classification 94V-0
Epitaxial construction
.187(4.75)
.167(4.25)
ꢀ
ꢀ
.012(.31)
.006(.15)
High temperature soldering:
260oC / 10 seconds at terminals
.103(2.61)
.078(1.99)
Mechanical Data
.012(.31)
.006(.15)
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Case: Molded plastic
Terminals: Solder plated
Polarity: Indicated by cathode band
Packaging: 12mm tape per EIA STD RS-481
Weight: 0.093gram
.056(1.41)
.035(0.90)
.008(.20)
.004(.10)
.208(5.28)
.200(5.08)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol SS
22
SS
23
30
21
30
SS
24
40
28
40
SS
25
50
35
50
SS
26
60
42
60
SS
29
90
63
90
SS
210
100
70
Type Number
Units
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
20
14
20
V
V
V
Maximum DC Blocking Voltage
100
Maximum Average Forward Rectified Current
at TL(See Fig. 1)
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
(Note 1) @ 2.0A
Maximum DC Reverse Current @ TA =25℃
I(AV)
IFSM
VF
2.0
A
A
V
50
0.5
20
0.70
0.85
0.4
0.1
20
mA
mA
IR
at Rated DC Blocking Voltage @ TA=100℃
Typical Junction Capacitance (Note 3)
Typical Thermal Resistance ( Note 2 )
10.0
130
Cj
pF
℃/W
℃/W
℃
RθJL
RθJA
TJ
17
75
Operating Temperature Range
Storage Temperature Range
-65 to +125
-65 to +150
-65 to +150
℃
TSTG
Notes: 1. Pulse Test with PW=300 usec, 1% Duty Cycle
2. Measured on P.C.Board with 0.4 x 0.4”(10 x 10mm) Copper Pad Areas.
3. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
- 54 -
RATINGSAND CHARACTERISTIC CURVES (SS22 THRU SS210)
FIG.2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
50
2.0
RESISTIVE OR
INDUCTIVE LOAD
8.3ms Single Half Sine Wave
JEDEC Method
AT RATED TL
40
30
20
1.5
SS25-SS210
SS22-SS24
1.0
0.5
10
0
PCB MOUNTED ON 0.2X0.2"
(5.0X5.0mm) COPPER PAD AREAS
0
1
10
NUMBER OF CYCLES AT 60Hz
100
50
60
70
80
90
100 110
120 130 140 150 160
LEAD TEMPERATURE. (OC)
FIG.4-TYPICALREVERSE CHARACTERISTICS
FIG.3- TYPICAL FORWARD CHARACTERISTICS
100
50
SS22-SS24
SS25-SS210
TJ=125O
C
TJ=125OC
10
10
TJ=150OC
1
TJ=75O
C
1
TJ=25OC
0.1
PULSE WIDTH=300
1% DUTY CYCLE
S
0.1
0.01
TJ=25OC
SS22-SS24
SS25-SS26
SS29-SS210
0.001
0.01
0
20
40
60
80
100
120
140
0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.2
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FORWARD VOLTAGE. (V)
FIG.5-TYPICAL JUNCTION CAPACITANCE
FIG.6-TYPICAL CAPACITANCE
400
360
320
280
400
100
NOTE:TYPICAL CAPACITANCE
AT 0 V = 320 pF
Tj=25O
f=1.0MHz
Vsig=50mVp-p
C
240
200
160
120
80
SS29-SS210
SS22-SS24
SS25-SS26
40
0
10
0.1
0
4
8
12
V , REVERSE VOLTAGE (VOLTS)
R
16
20
24
28
32
36
40
1
10
100
REVERSE VOLTAGE. (V)
- 55 -
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