SOT-363RFG [TSC]
250mW High Speed Switching Array; 250mW的高速开关阵列
| 型号： | SOT-363RFG |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 250mW High Speed Switching Array |
| 文件： | 总3页 (文件大小：210K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAV99S
250mW High Speed Switching Array
Small Signal Diode
SOT-363
Features
Fast Switching Speed
H
J
High Reverse Breakdown Voltage Rating
Moisture sensitivity level 1
I
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Pb free version and RoHS compliant
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
Unit (mm)
Unit (inch)
Min Max
Dimensions
Min
1.80
1.15
0.15
Max
A
B
C
D
E
F
G
H
I
2.00 0.071 0.079
1.35 0.045 0.053
0.30 0.006 0.012
1.30 BSC
2.10 BSC
1.10
0.42
0.1 BSC
0.051 BSC
0.083 BSC
Mechanical Data
Case : SOT-363 small outline plastic package
-
-
0.043
0.017
0.004 BSC
Terminal: Matte tin plated, lead free,solderable
per MIL-STD-202, Method 208 guaranteed
High temperature soldering guaranteed: 260°C/10s
Case material-UL Flammability Rating 94V-0
Weight : 0.008 qram(approx.)
0.25
0.02
0.40 0.010 0.016
0.10 0.001 0.004
J
Marking Code : K1
Pin Configutation
Ordering Information
Part No.
SOT-363
SOT-363
Package
BAV99S
BAV99S
Packing Code Packing Marking
3K / 7" Reel
3K / 7" Reel
RF
K1
K1
RFG
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Symbol
PD
Value
250
Units
mW
V
Power Dissipation
Repetitive Peak Reverse Voltage
Repetitive Peak Forward Current
Mean Forward Current
VRRM
IFRM
85
450
mA
mA
IO
200
4.5
Non-Repetitive Peak Forward Surge Current(Note1)
IFsM
A
0.5
Junction and Storage Temperature Range
TJ, TSTG
.
-65 to + 150
.
°C
Notes:1. Pulse Width=1μ sec &1 sec
Version : B11
BAV99S
250mW High Speed Switching Array
Small Signal Diode
Electrical Characteristics
Type Number
Symbol
Min
Max
Units
Reverse Breakdown Voltage
V(BR)
75
-
-
V
IR= 2.5μA
IF= 1.0mA
0.715
0.855
1.000
1.200
1.250
1
-
IF= 10mA
Forward Voltage
VF
-
V
IF= 50mA
-
IF= 100mA
IF= 150mA
VR= 75mA
-
Reverse Leakage Current
Junction Capacitance
Reverse Recovery Time (Note 2)
IR
-
uA
pF
ns
CJ
Trr
-
1.5
VR=0, f=1.0MHz
4
-
Notes:2. Reverse Recovery Test Conditions: I =I =10mA, R =100Ω
Tape & Reel specification
TSC label
Dimension
(mm)
3.15 ±0.10
Item
Carrier width
Symbol
Top Cover Tape
A
B
Carrier length
2.77 ±0.10
1.22 ±0.10
1.50 ± 0.10
178 ± 1
Carrier depth
C
Sprocket hole
d
Carieer Tape
Reel outside diameter
Reel inner diameter
Feed hole width
Sprocke hole position
Punch hole position
Sprocke hole pitch
Embossment center
Overall tape thickness
Tape width
D
D1
D2
E
55 Min
Any Additional Label (If Required)
13.0 ± 0.20
1.75 ±0.10
3.50 ±0.05
4.00 ±0.10
2.00 ±0.05
0.229 ±0.013
8.10 ±0.20
12.30 ±0.20
P0
d
P1
F
T
E
P0
P1
T
A
F
W
C
B
W
W1
Reel width
W1
D1
D
D2
Direction of Feed
Version : B11
BAV99S
250mW High Speed Switching Array
Small Signal Diode
Rating and Sharacteristic Curves
FIG 2 Reverse Current vs Reverse Voltage
FIG 1 Typical Forward Characteristics
Ta=75°C
Ta=75°C
Ta=25°C
Ta=25°C
Reverse Volatge (V)
Instantaneous Forward Volatge (V)
FIG 4 Typical Junction Capacitance
FIG 3 Admissible Power Dissipation Curve
Ambient Tempeatature (oC)
Reverse Voltage (V)
Version : B11
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