S3MB [TSC]
3.0 AMPS. Surface Mount Rectifiers; 3.0安培。表面贴装整流器
| 型号： | S3MB |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 3.0 AMPS. Surface Mount Rectifiers |
| 文件： | 总2页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S3AB THRU S3MB
3.0 AMPS. Surface Mount Rectifiers
Voltage Range
50 to 1000 Volts
Current
3.0 Amperes
SMB/DO-214AA
Features
.082(2.08)
.076(1.93)
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For surface mounted application
Glass passivated junction chip.
Low forward voltage drop
High current capability
Easy pick and place
High surge current capability
Plastic material used carries Underwriters
Laboratory Classification 94V-O
High temperature soldering:
260oC / 10 seconds at terminals
.147(3.73)
.137(3.48)
.187(4.75)
.167(4.25)
.012(.31)
.006(.15)
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.103(2.61)
.078(1.99)
Mechanical Data
.012(.31)
.006(.15)
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Case: Molded plastic
Terminals: Solder plated
Polarity: Indicated by cathode band
Packaging: 16mm tape per EIA STD RS-481
Weight: 0.093 gram
.056(1.41)
.035(0.90)
.008(.20)
.004(.10)
.208(5.28)
.200(5.08)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
S3AB S3BB S3DB S3GB S3JB S3KB S3MB
Symbol
VRRM
VRMS
VDC
Type Number
Maximum Recurrent Peak Reverse Voltage
Units
50 100 200 400 600 800 1000
35 70 140 280 420 560 700
50 100 200 400 600 800 1000
V
V
V
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
@TL =75℃
I(AV)
3.0
A
A
V
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
IFSM
100
Maximum Instantaneous Forward Voltage
@ 3.0A
VF
IR
1.15
Maximum DC Reverse Current @ TA =25℃
at Rated DC Blocking Voltage @ TA=125℃
10.0
250
uA
uA
Typical Thermal Resistance (Note 3)
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Operating Temperature Range
℃/W
RθJL
Trr
Cj
10
2.5
40
uS
pF
℃
℃
TJ
-55 to +150
Storage Temperature Range
TSTG
-55 to +150
Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1 MHz and Applied VR=4.0 Volts
3. Measured on P.C. Board with 0.4 x 0.4” (10 x 10mm) Copper Pad Areas.
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RATINGS AND CHARACTERISTIC CURVES (S3AB THRU S3MB)
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
FIG.2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
3.5
3.0
2.5
2.0
1.5
200
100
50
1.0
0.5
0
RESISTIVE OR
INDUCTIVE LOAD
8.3ms Single Half Sine Wave
JEDEC Method
Tj=Tj max
P. C. BOARD MOUNTED ON 8.0mm2
PAD AREAS
10
50
60
70
80
90
100 110 120 130 140 150
165
100
1
5
10
50
LEAD TEMPERATURE. (oC)
NUMBER OF CYCLES AT 60Hz
FIG.3- TYPICAL FORWARD CHARACTERISTICS
FIG.4- TYPICAL REVERSE CHARACTERISTICS
100
100
30
10
Tj=1250C
10
3
1
0.3
0.1
1
Tj=250C
0.03
0.01
Tj=250C
PULSE WIDTH-300
2% DUTY CYCLE
S
0.1
1.4
1.6
0.6
0.7
.8
.9
1.0
1.2
0
20
40
60
80
100
120
140
FORWARD VOLTAGE. (V)
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.5- TYPICAL JUNCTION CAPACITANCE
100
50
Tj=250C
f=1.0MHz
Vsig=50mVp-p
10
5
100
5
10
50
1
REVERSE VOLTAGE. (V)
- 499 -
相关型号：
S3MB-T3-LF
Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN
WTE
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