RS3M [TSC]
3.0 AMPS. Fast Recovery Surface Mount Rectifiers; 3.0安培。快速恢复表面贴装整流器
| 型号： | RS3M |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 3.0 AMPS. Fast Recovery Surface Mount Rectifiers |
| 文件： | 总2页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RS3A THRU RS3M
3.0 AMPS. Fast Recovery Surface Mount Rectifiers
Voltage Range
50 to 1000 Volts
Current
3.0 Amperes
SMC/DO-214AB
Features
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For surface mounted application
Glass passivated junction chip
Built-in strain relief, ideal for automated
placement
.129(3.27)
.118(3.0)
.245(6.22)
.220(5.59)
ꢀ
Plastic material used carries Underwriters
Laboratory Classification 94V-O
Fast switching for high efficiency
High temperature soldering:
.280(7.11)
.260(6.60)
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.012(.31)
.006(.15)
260OC /10 seconds at terminals
Mechanical Data
.103(2.62)
.079(2.00)
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Cases: Molded plastic
Terminals: Solder plated
Polarity: Indicated by cathode band
Packing: 16mm tape per E1A STD
RS-481
.008(.20)
.004(.10)
.060(1.52)
.030(0.76)
.320(8.13)
.305(7.75)
ꢀ
Weight: 0.21 gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol RS RS RS RS RS RS RS
3A 3B 3D 3G 3J 3K 3M
50 100 200 400 600 800 1000
35 70 140 280 420 560 700
Type Number
Units
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
V
V
V
Maximum DC Blocking Voltage
50 100 200 400 600 800 1000
Maximum Average Forward Rectified Current
See Fig. 1 @TL=75OC
I(AV)
3.0
A
A
V
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load
(JEDEC method )
IFSM
100
1.3
Maximum Instantaneous Forward Voltage
@ 3.0A
VF
IR
Maximum DC Reverse Current @ TA =25℃
at Rated DC Blocking Voltage @ TA=125℃
10
250
uA
uA
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Typical Thermal Resistance (Note 3)
Trr
Cj
150
250
500
nS
pF
℃/W
℃/W
℃
60
RθJA
RθJL
TJ
50.0
15.0
Operating Temperature Range
Storage Temperature Range
-55 to +150
-55 to +150
℃
TSTG
Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1 MHz and Applied VR=4.0 Volts
3. Thermal Resistance from Junction to Ambient and from Junction to Lead Mounted on P.C.B. with
0.6”x0.6” ( 16 x 16 mm ) Copper Pad Areas.
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RATINGS AND CHARACTERISTIC CURVES (RS3A THRU RS3M)
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
FIG.2- MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
3.0
2.5
150
Tj=Tj max.
8.3ms Single Half Sine Wave
JEDEC Method
RESISTIVE OR
INDUCTIVE LOAD
125
100
2.0
1.0
0
75
50
P.C.B. MOUNTED
0.3 X 0.3" (8.0X8.0mm)
COPPER PAD AREAS
25
0
150
1
0
50
100
LEAD TEMPERATURE. (oC)
200
10
100
NUMBER OF CYCLES AT 60Hz
FIG.4- TYPICAL REVERSE CHARACTERISTICS
FIG.3- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
100
100
Tj=1250C
Tj=1250C
10
10
Tj=750C
Tj=250C
1
Pulse Width=300
1% Duty Cycle
s
Tj=250C
1
Tj=-400C
0.1
0.1
0.4
0.01
1.0
1.2
1.4
1.6
1.8
2.0
0.6
0.8
0
20
40
60
80
100
120
140
FORWARD VOLTAGE. (V)
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.5- TYPICAL JUNCTION CAPACITANCE
100
Tj=250C
f=1.0MHz
Vsig=50mVp-p
10
1
10
100
REVERSE VOLTAGE. (V)
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