RB751V-40RRG [TSC]
200mW, Low VF SMD Schottky Barrier Diode; 200mW的低VF SMD肖特基势垒二极管
| 型号： | RB751V-40RRG |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 200mW, Low VF SMD Schottky Barrier Diode |
| 文件： | 总3页 (文件大小：137K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RB751V-40
200mW, Low VF SMD Schottky Barrier Diode
Small Signal Diode
SOD-323
Features
Low power loss, high current capability, low VF
Surface device type mounting
Moisture sensitivity level 1
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Pb free version and RoHS compliant
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
Unit (mm)
Unit (inch)
Min Max
0.047 0.055
Dimensions
Min
1.20
2.50
0.25
1.60
0.80
0.08
Max
Mechanical Data
Case : SOD-323 small outline plastic package
A
B
C
D
E
F
1.40
2.80 0.098 0.106
0.35 0.010 0.014
Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
High temperature soldering guaranteed: 260°C/10s
Polarity : Indicated by cathode band
Weight :0.004 gram (approximately)
Marking Code : 5
1.80
0.90
0.15
0.063 0.071
0.031 0.035
0.003 0.006
0.19 REF
G
0.475 REF
Pin Configuration
Ordering Information
Marking
Package
Part No.
Packing
Suggested PAD Layout
5
5
SOD-323 RB751V-40 RR
3K / 7" Reel
0.63
0.025
SOD-323 RB751V-40 RRG 3K / 7" Reel
0.83
0.033
1.60
0.063
2.86
0.113
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Symbol
PD
Value
200
Units
mW
V
Power Dissipation
Repetitive Peak Reverse Voltage
Reverse Voltage
VRRM
VR
40
30
V
Mean Forward Current @ TL=100°C (Lead Temperature)
Non-Repetitive Peak Forward Surge Current (Note 1)
Thermal Resistance (Junction to Ambient) (Note 2)
Junction and Storage Temperature Range
IO
30
mA
A
IFSM
0.2
RθJA
TJ, TSTG
500
°C/W
°C
-45~125
Notes:1. Test Condition : 8.3ms Single half Sine-Wave Superimposed on Rated Load (JEDEC Method)
Notes:2. Valid provided that electrodes are kept at ambient temperature
Version : B10
RB751V-40
200mW, Low VF SMD Schottky Barrier Diode
Small Signal Diode
Electrical Characteristics
Type Number
Symbol
Min
Max
0.37
0.5
Units
V
Forward Voltage
1.0mA
30V
VF
IR
-
-
IF=
Reverse Leakage Current
Junction Capacitance
uA
VR=
VR=0V, f=1.0MHz
CJ
2
pF
Tape & Reel specification
TSC label
Item
Symbol
Dimension(mm)
1.7 ± 0.10
3.73 ± 0.10
1.68 ±0.10
1.5 ± 0.1
Carrier width
A
B
Top Cover Tape
Carrier length
Carrier depth
Sprocket hole
C
d
Carieer Tape
Reel outside diameter
Reel inner diameter
Feed hole width
D
178 ± 1
D1
D2
E
55 Min
Any Additional Label (If Required)
13.0 ± 0.20
1.75 ±0.10
3.50 ±0.05
4.00 ±0.10
2.00 ±0.05
0.23 ± 0.05
8.00 ±0.20
14.4 Max
P0
Sprocke hole position
Punch hole position
Sprocke hole pitch
Embossment center
Overall tape thickness
Tape width
d
P1
F
T
E
P0
P1
T
A
F
W
C
B
W
W1
Reel width
W1
D
D2
D1
Version : B10
RB751V-40
200mW, Low VF SMD Schottky Barrier Diode
Small Signal Diode
Rating and Sharacteristic Curves
FIG 1 Typical Forward Characteristics
FIG 2 Forward Current Derating Curve
100
0.4
0.32
0.24
0.16
0.08
0
Ta=25oC
10
1
0.1
0.01
0
0.2
0.4
0.6
0.8
1
0
25
50
75
100
125
150
VF Forward Voltage (V)
Terminal Temperature (°C)
FIG 3 Admissible Power Dissipation Curve
FIG 4 Typical Junction Capacitance
300
250
200
150
100
50
5
4
3
2
1
0
0
0
20
40
60
80
100
120
140
0
5
10
15
20
25
Ambient Tempeatature (oC)
Reverse Voltage (V)
Version : B10
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