MMBD3004SE [TSC]
350mW SMD Switching Diode; 350mW的贴片开关二极管
| 型号： | MMBD3004SE |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 350mW SMD Switching Diode |
| 文件： | 总3页 (文件大小：144K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBD3004/CA/CC/SE
350mW SMD Switching Diode
Small Signal Diode
SOT-23
A
F
Features
Fast switching speed
B
E
Surface device type mounting
Moisture sensitivity level 1
C
D
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Pb free version and RoHS compliant
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
Unit (mm)
Unit (inch)
Dimensions
Min
2.80
1.20
0.30
1.80
2.25
0.90
Max
Min
Max
Mechanical Data
Case :SOT-23 small outline plastic package
A
B
C
D
E
F
3.00 0.110 0.118
1.40 0.047 0.055
0.50 0.012 0.020
2.00 0.071 0.079
2.55 0.089 0.100
1.20 0.035 0.043
Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
High temperature soldering guaranteed: 260°C/10s
Weight : 0.008gram (approximately)
Marking Code : HC.PZ.RA.PY.
Pin Configuration
MMBD3004SE
MMBD3004
MMBD3004CA
MMBD3004CC
Ordering Information
Suggested PAD Layout
Packing
Code
0.95
Part No.
Package
Packing
Marking
0.037
MMBD3004
SOT-23
RF
RF
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
HC
PZ
RA
PY
HC
PZ
RA
PY
MMBD3004CC SOT-23
MMBD3004CA SOT-23
MMBD3004SE SOT-23
RF
2.0
RF
0.079
0.9
MMBD3004
SOT-23
RFG
RFG
RFG
RFG
0.035
MMBD3004CC SOT-23
MMBD3004CA SOT-23
MMBD3004SE SOT-23
0.8
0.031
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Symbol
Value
350
Units
mW
V
Power Dissipation
PD
VRRM
IFRM
IO
Repetitive Peak Reverse Voltage
Repetitive Peak Forward Current
Mean Forward Current
350
625
mA
mA
225
Non-Repetitive Peak Forward Surge Current
4
Pulse width= 1μs
Pulse width= 1s
Thermal Resistance (Junction to Ambient)
Junction and Storage Temperature Range
IFSM
A
1
RθJA
357
°C/W
°C
TJ, TSTG
-65 to + 150
Note1. The suggested land pattern dimensions have been provided for reference only, as actual pad layouts
may vary despending on application.
Version : A11
MMBD3004/CA/CC/SE
350mW SMD Switching Diode
Small Signal Diode
Electrical Characteristics
Type Number
Symbol
Min
Max
-
Units
Reverse Breakdown Voltage
IR=
IF=
IF=
100μA
100mA
200mA
V(BR)
350
V
V
V
-
-
-
-
-
-
1.00
1.25
0.1
Forward Voltage
VF
VR= 240V
Reverse Leakage Current
IR
μA
VR= 240V,Tj=150
100.0
5
VR=1V,
f=1.0MHz
CJ
pF
ns
Junction Capacitance
Reverse Recovery Time IF=IR=30mA, RL=100Ω, IRR=0.1IR
Trr
50.0
Tape & Reel specification
Item
Carrier width
Symbol
Dimension(mm)
3.15 ±0.10
2.77 ±0.10
1.22 ±0.10
1.50 ± 0.10
178 ± 1
A
B
TSC label
Carrier length
C
Carrier depth
d
Sprocket hole
Top Cover Tape
D
Reel outside diameter
Reel inner diameter
Feed hole width
Sprocket hole position
Punch hole position
Sprocket hole pitch
Embossment center
Overall tape thickness
Tape width
D1
D2
E
55 Min
13.0 ± 0.20
1.75 ±0.10
3.50 ±0.05
4.00 ±0.10
2.00 ±0.05
0.229 ±0.013
8.10 ±0.20
12.30 ±0.20
Carieer Tape
F
Any Additional Label (If Required)
P0
P1
T
W
W1
P0
d
Reel width
P
T
E
A
F
W
C
B
W1
D1
Direction of Feed
D
D2
Version : A11
MMBD3004/CA/CC/SE
350mW SMD Switching Diode
Small Signal Diode
Rating and Sharacteristic Curves
FIG 1 Typical Forward Characteristics
FIG 2 Typical Reverse Characteristics
1000
100
10
1000
100
10
Tj=25oC
1
Tj=25oC
1
0.1
0.1
0.01
0.01
0.001
0.3 0.6 0.9 1.2 1.5
0
1.8
2.1
0
0.5
1
1.5
2
2.5
3
3.5
Inataneous Forward Voltage (V)
Inataneous Reverse Voltage (V)
FIG 3 Admissible Power Dissipation Curve
FIG4 Typical Capacitance vs Reverse Voltage
1.1
1
400
350
300
250
200
150
100
50
0.9
0.8
0.7
0
0
25
50
75
100
125
150
175
200
0.01
0.1
1
10
100
Reverse Voltage
Ambient Temperature (°C)
Version : A11
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